非(微)晶矽薄膜太陽能電池之能隙結構研究

Research on the bandgap engineering of micromorph silicon thin-film solar cells

陳柏丞(Bo-Cheng Chen)

指導教授 ： 陳昇暉 ； 李正中

國立中央大學/理學院/光電科學研究所/碩士(2011年)

摘要

本論文研究重點為了拓展矽薄膜太陽能電池對太陽光頻譜的吸收，因此在單一p-i-n的結構下，於本質層中堆疊非晶矽與不同結晶率的微晶矽，利用模擬軟體AMPS-1D有系統地探討不同的堆疊對太陽光吸收的響應。

研究結果顯示：一、在只有單一本質層的矽薄膜太陽能電池中，本質層的材料會影響最佳效率的是厚度；當使用結晶率越高的微晶矽薄膜，其需要更大的厚度才可以達到最佳的效率；二、本質層以雙層堆疊時，若要有效的增加太陽的光萃取，非晶矽與微晶矽其材料厚度與排列方式對於頻譜響應有很大的影響；三、在固定厚度下，雙層結構中以”微晶矽–非晶矽”的堆疊結構對於光吸收有較好的表現，而這樣的結構中也擁有較高的短路電流 (Jsc) 與填充因子 (FF)。當結構為微晶矽–非晶矽的排列，厚度各為單位厚度的4倍，則效率最高可以達到11.1%。

關鍵字

薄膜太陽能電池 ； 能隙結構 ； AMPS-1D

並列摘要

The thesis aims on the improvement of the efficiency of the silicon thin-film solar cell by better extraction of solar spectrum. We have analyzed the influence of the spectral response using AMPS-1D simulator by stacking amorphous silicon and microcrystalline silicon with different crystalline volume fraction of the intrinsic layer in p-i-n structure.

The thesis reveals the following results: first, the optimized thickness of the intrinsic layer is related to the crystalline volume fraction of the microcrystalline silicon. The thickness of an i-layer with a higher crystalline volume fraction must be thicker to obtain higher efficiency. Second, when the intrinsic layer was constructed by two layers, an amorphous layer and a microcrystalline layer, the spectral response of the device is influenced by both layer thickness and arrangement. Third, for a fixed thickness, the layer structure of the "microcrystalline silicon – amorphous silicon" is better for extraction of solar spectrum. The structure also features the highest Jsc and FF with 90% crystalline volume fraction of the microcrystalline silicon and amorphous silicon stack. The conversion efficiency can reach 11.1% .

並列關鍵字

bandgap engineering ； silicon thin-film solar cells ； AMPS-1D

參考文獻

[5] D. E. Carlson and C. R. Wronski, "Amorphous silicon solar cell," Applied Physics Letters 28(11), 671-673 (1976).

[6] Y. Hamakawa, H. Okamoto, and Y. Nitta, "A new type of amorphous silicon photovoltaic cell generating more than 2.0 V " Applied Physics Letters 35(2), 187-189 (1979).

[7] D. L. Staebler and C. R. Wronski, "Reversible conductivity changes in discharge‐produced amorphous Si " Applied Physics Letters 31(4), 292-294 (1977).

[8] N. F. Mott and E. A. Davis, Electronic processes in non-crystalline materials (Clarendon Press, Oxford, 1971).

[9] K. Prasad, F. Finger, S. Dubail, A. Shah, and M. Schubert, "Deposition of phosphorus doped microcrystalline silicon below 70 °C at 70 MHz " Journal of Non-Crystalline Solids 137-138(Part 2), 681-684 (1991).