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  • 學位論文

可溶性有機薄膜電晶體材料三併環 及四併環噻吩衍生物之開發

Highly Soluble Dithienothiophene (DTT) and Tetrathienoacene (TTA ) Derivatives Development for Organic Thin Film Transistor (OTFT) Application

指導教授 : 陳銘洲
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摘要


本研究延續實驗室之併環噻吩開發,製備出具有高穩定性可溶性有機半導體材料,這兩個可溶性半導體材料皆具有良好的共軛程度,於三併環噻吩以及四併環噻的分子中引入長碳鏈,並在其兩端接上苯噻吩,兩個新的可溶性半導體材料即被合成出,且合成後的材料也將探討其物理性質與電性表現。其中 DBT-TTAR2 此材料具有較低的 LOMO 值、較高的 HOMO 值、擁有較低的能帶隙,有助於載子的注入傳輸,在文獻中 DP-DTT,P-type 半導體材料,其載子移動率分別為 0.42cm2/Vs,而本論文中在分子內引入長碳鏈使其變成可溶性半導體材料,有機會運用溶液製程方式將材料鍍上元件;延伸分子共軛程度,增加了 π-π 混成軌域,希望能夠提高其載子移動效率,有不錯的電性表現。

並列摘要


This research focused on the development of highly soluble dithienothiophene (DTT) and tetrathienoacene (TTA) derivatives for organic thin film transistor (OTFT) application. Two new highly soluble thienoacenes derivative, DBT-DTTR2 and DBT-TTAR2 were synthesized. The enhancement of π – π molecular conjugation with dibenzo[b,d]thiophene (DBT) group and increasing its solubility properties with introducing alkyl side chains on both of DTT and TTA core. The chemical and physical characterizing results which were included characterizing theirs optical, electrochemical and thermal properties shows that DBT-TTAR2 has a better performance than DBT-DTTR2 for OTFT application. DBT-DTTR2 and DBT-TTAR2 were fabricated as a p-type semiconductor of OTFT by solution process at Industrial Technology Research Institute. Both compounds were predicted can bring out a high mobility value which is around 0.1 cm2/Vs. It was compared with another organic semiconductor based on thienoacene derivatives, DP-DTT (μ = 0.42 cm2/Vs) which has a good stability.

參考文獻


[1] Bredas, J. L. 2002. Organic semiconductors: A theoretical characterization of the basic parameters governing charge transport. Proceedings of the National Academy of Sciences, 99, 5804.
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[3] Dimitrakopoulos, C. D.and Malenfant, P. R. L. 2002. Organic Thin Film Transistors for Large Area Electronics. Advanced Materials, 14, 99.
[4] Dimitrakopoulos, C. D.and Mascaro, D. J. 2001. Organic thin-film transistors: A review of recent advances. IBM Journal of Research and Development, 45, 11.
[5] Dong, H., Wang, C. and Hu, W. 2010. High performance organic semiconductors for field-effect transistors. Chemical Communications, 46, 5211.

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