具有超低耗能,傳輸資料量比值在850nm波段超高速(40 Gb/s)面射型雷射

850 nm Vertical-Cavity Surface-Emitting Lasers with Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/sec Operations

顏志成(Jhih-Cheng Yean)

指導教授 ： 許晉瑋

國立中央大學/資訊電機學院/電機工程學系/碩士(2012年)

摘要

我們將展示垂直共振腔面射型雷射一種新式的結構，此結構達到超高的調變速度(40 Gbit/sec)也能達到極低的功率消耗特性。在高速操作下，為了降低功率消耗最好的方法是微縮水氧孔徑，然而水氧孔徑也不能一昧的微縮，德國團隊的元件孔徑已經微縮至2μm，但這會造成極高的微分電阻(differential resistance)和單一模態、低光功率(<1 mW)，而這些特性會衍伸出電-光頻寬(Electrical-to-optical bandwidth)最大值被侷限住，還有可靠度表現上也不佳。藉由水氧層掀離和鋅擴散這兩項技術運用在850nm波段面射型雷射，我們不只能降低元件本身的水氧層電容(Coxide)達到降低RC延遲效應提高調變速度也能降低微縮水氧孔徑帶來的高微分電阻同時還能抑制高電流下模態的數量，讓元件在高資料傳輸量下也能擁有高傳輸距離，動態特性上在室溫與變溫85°C量測下皆有很好的特性，包括極高的D-factor(13.4 GHz/mA1/2)，37 Gbit/sec眼圖操作下有極低的能量比資料量(energy-to-data ratio:EDR=137 fJ/bit)，透過OM4 multi-mode fiber，元件能在25 Gbit/sec資料傳輸量下傳達0.8 Km遠，能量比資料傳輸距離(Energy-to-data distance ratio)為175.5 fJ/bit。

關鍵字

半導體雷射 ； 垂直共振腔半導體雷射

並列摘要

We demonstrate a novel structure of vertical-cavity surface-emitting laser (VCSEL) for high-speed (~40 Gbit/sec) with ultra-low power consumption performance. To ultimately downscale the size of oxide (current-confined) aperture of high-speed VCSELs is one of the most effective way to reduce the power consumption during high-speed operation. However, such miniaturized oxide-apertures (~ 2 ?m diameter) in VCSELs would result in a large differential resistance, optical single-mode output, and a small maximum output power (< 1 mW). These characteristics seriously limit their maximum electrical-to-optical (E-O) bandwidth and device reliability. By use of the oxide-relief and Zn-diffusion techniques in our demonstrated 850 nm VCSELs, we can not only release the burden imposed on downscaling the current-confined aperture for high-speed with low-power consumption performance but also can manipulate the number of optical modes inside cavity for maximizing the E-O bandwidth and product of bit-rate transmission distance in OM4 fiber. State-of-the-art dynamic performances at both room-temperature and 85 ℃ operations can be achieved by use of our device. These include extremely-high D-factor (~13.5 GHz/mA1/2), record-low energy-to-data ratios (EDR: 140 fJ/bit) at 37 Gbit/sec operation, and error-free transmission over 0.8 km OM4 multi-mode fiber with record-low energy-to-data distance ratio (EDDR: 175.5 fJ/bit.km) at 25 Gbit/sec operation.

並列關鍵字

Vertical cavity surface emitting lasers ； Semiconductor lasers

參考文獻

[1] “300-Gb/s, 24-Channel Full-Duplex, 850-nm, CMOS-Based Optical Transceivers,” in Proc. OFC 2008 , pp. OMK5, San Diego, CA, Feb., 2008.

[3] Shigeru Nakagawa, Daniel Kuchta, Clint Schow, Richard John, Larry A. Coldren,Yu-Chia Chang, “1.5mW/Gbps Low Power Optical Interconnect Transmitter Exploiting High-Efficiency VCSEL and CMOS Driver,” in Proc. OFC 2008, pp. OThS3, San Diego, CA, Feb. 2008.

[4] Jin-Wei Shi, C.-C. Chen, Y.-S. Wu, Shi Hao Guol, and Ying-Jay Yang“The Influence of Zn-Diffusion Depth on the Static and Dynamic Behavior of Zn-Diffusion High-Speed Vertical-Cavity Surface-Emitting Lasers at an 850 nm Wavelength＂IEEE J. Quantum Electron., vol. 45, no. 7, July 2009

[5] K. L. Lear and A. N. Al-Omari, “Progress and issues for high speed vertical cavity surface emitting lasers,” in Proc. SPIE, vol. 6484, pp. 64840J-1-64840J-12, 2007.

[6] R. S. Geel, S. W. Corzine, J. W. Scott, D. B. Young, and L. A. Coldren, “Low threshold planarized Vertical-cavity surface-emitting lasers” IEEE, Photon. Technol. Lett. , vol. 2, 234, 1990.