銻化物異質接面場效電晶體之研製及其微波切換器應用

本論文利用銻化物材料擁有優異的高速載子傳輸特性，發展低功率及高速的異質接面場效電晶體，並且利用高電子遷移率電晶體來設計串並聯電晶體方式的切換器電路，其切換器電路操作頻率從直流到30 GHz。元件電性部分有直流特性與高頻特性，在閘極長度為2 μm的砷化銦/銻化鋁(InAs/AlSb)之N型通道元件特性及銻化銦鎵/銻化鋁(InGaSb/AlSb)之P型通道元件特性，分別於汲極偏壓為VDS = 0.4 V和VDS = -3 V下，其汲極飽和電流分別為IDSS= 230及14.7 mA/mm，轉導增益分別為gm = 400和43.4 mS/mm，電流增益截止頻率分別為fT = 11.3和1.4 GHz。本論文中也利用Yang-Long直流及冷態(cold mode)等量測方法分別萃取高速電子電洞遷移率電晶體之內外部參數，並建立元件小訊號模型及之大訊號模型。而切換器電路方面主要為使用N型通道元件來設計，利用串並聯電晶體方式分別設計單刀單擲(Single-Pole Single-Throw，SPST)及單刀雙擲(Single-Pole Double-Throw，SPDT)兩種電路架構。而本研究還另外製作了雙閘極電晶體在這兩種電路架構中，與單閘極電晶體做分析與比較。在直流到10 GHz間雙閘極切換器量測的插入損耗小於4 dB且隔離度大於25 dB。而電路導通在頻率100 MHz時，輸入一分貝增益壓縮點(P1dB)及輸入三階截斷點(IIP3)分別為14和23.4 dBm。

關鍵字

砷化銦；銻化物；切換器；小訊號模型

並列摘要

Antimonide-based compound semiconductors (ABCSs) have a few advantages of low power and high speed because of their superior carrier transport properties. Several switches are proposed using the ABCS technology, and the operation frequency is from dc to 30 GHz. InAs/AlSb N-type and InGaSb/AlSb P-type heterojunction field effect transistors (HFETs) with a gate length of 0.2 μm show good DC and RF performance. With a drain voltages of 0.4 and -3 V, the N-type and P-type HFETs have the maximum drain current densities of 230 and 14.7 mA/mm, the transconductance of 400 and 43.4 mS/mm and the unity current gain frequencies (fT) of 11.3 and 1.4 GHz, respectively. In this thesis, we used Yang-Long and the cold mode methods, extracting the N- and P-type extrinsic and intrinsic parameters to establish small-signal and large-signal models. The switches are designed using series-shunt n-type HEMTs for single-pole single-throw (SPST) and single-pole double-throw (SPDT) configurations. In addition, the dual-gate devices were fabricated for the SPST and SPDT switches, the results can be compared with the single-gate devices. From DC to 10 GHz, the measured insertion losses and isolations of the proposed switch are less than 4 dB and greater than 25 dB, respectively. When the switch is on state at 100 MHz, the measured input P1dB and IIP3 are 14 and 23.4 dBm.

並列關鍵字

antimonide-Based Compound ； InAs ； small-signal model ； switch

參考文獻

[1] J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer., “AlSb/InAs HEMTs for low-voltage, high-speed applications,” IEEE Trans. Electron Devices, vol. 45, no. 9, pp. 1869-1875, 1998.

[2] C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer, and J. H. English, “Growth of InAs/AlSb quantum wells having both high mobilities and high electron concentrations,” J. Electron. Mat., vol. 22, no. 2, pp. 255-258, 1992.

[3] C. A. Chang, R. Ludeke, L. L. Chang, L. Esaki, “Molecular-beam epitaxy (MBE) of In1-xGaxAs and GaSb1-yAsy,” Appl. Phys. Lett., vol. 31, no. 11, pp. 759-761, 1977.

[5] R. Ludeke, “Electronic properties of (100) surfaces of GaSb and InAs and their alloys with GaAs,” IBM J. Res. Dev., vol. 22, no. 3, pp. 304-314, 1978.

[7] B. R. Bennett, R. Magno, J. B. Boos, W. Kruppa, M. G. Ancona, “Antimonide-based compound semiconductors for electronic devices: A review,” Solid State Electron., vol.49, no. 12, pp. 1875-1895, 2005.

國際替代計量

銻化物異質接面場效電晶體之研製及其微波切換器應用

未授權

主題瀏覽