釔摻雜氧化銦透明薄膜電晶體之光電特性與介電層材料研究探討

The Photoelectric Characteristics Research Of Yttrium-doped Indium Oxide Thin-Film Transistors And Dielectric Layers

林彥鋒(Lin, Yan Feng)

指導教授 ： 丁初稷

國立中正大學/工學院/光機電整合工程研究所/碩士(2012年)

摘要

本論文在探討釔摻雜氧化銦透明導電薄膜電晶體元件特性，利用溶膠-凝膠法製備釔摻雜氧化銦透明導電薄膜作為薄膜電晶體主動層，並改變釔的濃度以得到最佳之特性。
其中釔摻雜氧化銦透明薄膜利用高溫燒結成膜，由GI-XRD觀測出結晶狀，並可計算出晶粒大小約為10 nm大小。使用SEM、AFM觀測其表面型態，表面粗糙度為 4~10 nm。使用UV-Vis量測釔摻雜氧化銦透明導電膜的穿透率，在可見光部分都可以在85%以上。使用霍爾量測出釔濃度改變對氧化銦薄膜電阻率、載子濃度及遷移率的影響。使用 XPS 分析，可驗證釔的摻雜多寡對於氧空缺所造成電性之改變。此外也針對介電層材料不同對電性的影響做簡單的分析。
實驗中得知釔濃度為 12% 時Ion/Ioff = 1.20x105、載子遷移率3.80 cm2/V-s，次臨限擺幅為2.15 V/decade、臨限電壓為18.00 V，有著最理想的電晶體特性。

關鍵字

薄膜電晶體 ； 釔 ； 溶膠凝膠法

並列摘要

This paper prepared by solution with Yttrium doped indium oxide as the transparent conductive thin film. Change the various mole ratio of yttrium as the active layer of thin-film transistors. It used mainly by the electronegativity difference of Y and O is greater than In and O, to reduce the oxygen vacancy generation and concentration, suitable for thin film transistor.

GIXRD observation crystal of YIO thin films, and can calculate the grain size about 10nm size. To use SEM, AFM observations of its surface morphology. To use hall measurement to measure YIO hall mobility, resistivity and carrier concentration. XPS verified that the vacancy related oxygen decreased with increasing of Y concentration. It can confirm that YIO transparent thin films can be made into a good transistor active layer. In addition, dielectric layers is also the part for research.

The optimum YIO TFT occurred at a YIO mole ratio of 0.12:1 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 3.80 cm2/Vs, 18.00 V, 2.15 V/decade, and ~105, respectively.

並列關鍵字

thin film transistor ； Yttrium ； sol-gel

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