鈦金屬常被用於生醫植體上,鈦硬度高且質量輕,使得機械性質極佳,具有耐腐蝕性、耐化學性、低熱傳導性以及生物相容性佳等優點。生醫植體是屬於一種與人體直接接觸的材料,故其表面特性及為重要,故藉由表面改質方式提高生物相容性為生醫植體主要研究重點之一,本研究分別利用二個部分來進行表面改質,第一部分為先利用氧氣電漿蝕刻,造成鈍化及表面粗糙度改變,以往都是先利用噴砂來改變表面粗糙度,但此方法容易造成表面上殘留進行噴砂處理之顆粒與粉末,因此改用電漿方式處理可避免此情形發生,而發現利用02 電漿蝕刻,氧化層效果隨著功率提升與電漿時間加長而增加,且表面粗糙度上升與坑洞size增加;第二部分為利用超臨界流體具有如氣體般的低黏度與幾乎無表面張力之特性,於超臨界二氧化碳( SC-CO2) 下進行雙酸( H2SO4/ HCl) 蝕刻液蝕刻經過電漿處理表面之鈦試片,發現蝕刻液容易與表面進行反應,蝕刻產生緻密且多孔化結構,而緻密且多孔化結構有利於生物相容性,但發現雙酸( H2SO4/ HCl)蝕刻液與超臨界CO2互溶後,蝕刻速率會低於常壓,且隨著壓力上升,其蝕刻速率下降。
Titanium have been often used in biomedical explants, the weight of titanium is light and hard, making excellent mechanical properties, resistant to corrosion, resistance to chemical attacks, low thermal conductivity and biocompatibility advantages. Biomedical explants are a human direct contact with the material, so the surface characteristics and most important, by surface modification to improve biocompatibility is one of the main research focus of biomedical explants. This research has been devided into two parts in order to analyze surface treatment. Firstly, Oxygen plasma etching is applied to surface passivation and roughness transformation. Sandblasted was used to change surface roughness, but bead and powder which during the procedure of surface transformation might remain on the surface treatment. The ways in which plasma etching avoids the remaining on the surface effectively. Meanwhile, the effect of TiO2 layer increases due to power addition and time of plasma extention, which increases the surface roughness and size of hole. Secondly, Supercritical fluid characterizes non-surface-tention and low-viscosity which is similiar to gas, Daul acid (H2SO4 / HCl) in supercritical carbon dioxide (SC-CO2) etching solution etching after plasma treatment the surface of the titanium, found that the etching solution is easy to react with the surface, and etched to dense and porous structure,The dense and porous structure of the branched biocompatible, but found that the acid (H2SO4 / HCl) etching liquid and supercritical CO2 miscible, the etching rate will be lower than the atmospheric pressure, and the pressure rise, the etch rate of decline.