石墨烯形貌對於透明導電層的影響

Impact of Morphology of Graphene on Its Performance as TOC

王奕文(Yi-Wen Wang)

指導教授 ： 謝雅萍

國立中正大學/工學院/光機電整合工程研究所/碩士(2014年)

摘要

在近年來許多研究利用CVD(Chemical Vapor Deposition)生長大晶粒的石墨烯，也針對大晶粒的石墨烯進行了電導特性的量測，發現大晶粒的石墨烯能得到較佳的電導特性，也因為較佳的電導特性且能應用的範圍較一般晶粒的石墨烯來的廣，因此大家利用CVD不同的製作條件來達成大晶粒石墨烯的生長，例如：退火溫度及氣體流量、生長壓力及溫度、生長的氫氣甲烷濃度和覆蓋式生長…等等，而我們也統整了一系列文獻生長大晶粒的條件為：高溫生長1050℃、低甲烷濃度及覆蓋式生長這三個為生長大晶粒的必要條件，我們利用已知條件來設定研究目標為生長出大晶粒的六角形石墨烯，從銅箔的拋光參數設定，調變氫氣甲烷濃度，進而利用CPCVD(controlled chamber pressure chemical vapor deposition)系統來調變壓力，最後採用覆蓋式生長來達到大晶粒的石墨烯生長，在得到大晶粒的石墨烯後我們使用2步驟生長，將其石墨烯長滿於銅箔上，並在轉印後比較不同晶粒大小的石磨烯電導特性的變化，並了解其在TOC上的表現差異。

關鍵字

CPCVD ； 大晶粒石墨烯 ； 覆蓋式生長

並列摘要

In recent years, there has been many studies on how to use CVD (Chemical Vapor Deposition) to grow big grain graphene.Graphene with big grain was confirmed to have better conductivity properties And thus it has more impact towardsreal applications than general graphene. Therefore, we combine various methodand parameters of CVD to achieve growth of big graphene grain. For example: the annealing temperature and the gas flow rate, growth pressure and temperature. The growth of hydrogen and methane concentrations enclosure growth ...etc. We study some papers and integrate various conditions for the growth of large grains: high-temperature growth 1050℃, low methane concentrations and enclosure method. That 3 condition are important of growth big grain graphene. Use conditions that we have known to research and grow big grain of hexagonal graphene. We start with testing copper polishing parameters, modulation of hydrogen concentration of methane, and using CPCVD (controlled chamber pressure chemical vapor deposition) system to modulate the pressure of the last enclosure used to achieve bigger grain graphene. After obtaining big grain graphene we use two steps method which makes graphene become continuous. Finally, transferring it on the wafer to study the changes of the electrical conductivity.

並列關鍵字

CPCVD ； big grain graphene ； enclosure

參考文獻

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