- 學位論文
氧化銫鎢滴附石墨烯的光偵測器元件光電特性研究
Studying the Fabrication and Photoelectric Characteristics of the CsWO3 Drop Casting on Graphene UV Photodetector
摘要
本研究利用水熱法製作奈米級氧化銫鎢顆粒，並將其利用滴落塗佈法 (Drop casting) 將含有氧化銫鎢奈米粉末溶液滴附在已轉印石墨烯完成之矽 (Si) 基板上，以紫外光源照射後比較不同氧化銫鎢滴附層數對光電特性所造成的影響。 實驗結果證明，氧化銫鎢在紫外光波段具有最好的吸收度，元件受到 UV 光照射後，原本佔據氧化銫鎢表面氧空缺的氧氣與水氣將會脫附至環境中，進而產生光電流。由本研究的結果得知，氧化銫鎢滴附的層數達到三層為最佳化結果，其光電特性：響應度 (responsivity)、上升時間 (rising time) 及下降時間 (falling time)、電流開關比(on-off ratio)分別為：1267.52 A/W、4.91 s、8.24 s 、Ion/ Ioff = 1.62。證明以石墨烯做為基底有助於提升光響應度及反應時間。
並列摘要
In this research, we are synthesize the nano-sized homogenous CsxWO3 particles by using hydrothermal method, and then drop casting CsxWO3 solution on the Si substrate, which has transferred graphene on it. We try to observe that the effect of optical characteristics in UV irradiation with different number of CsxWO3 layers. The result revealed that the thin film of CsxWO3 has excellent absorbance in ultraviolet light, (hole-trapping chemisorbed oxygen molecules at the surface of photosensitive materials in which the UV light induced desorption/re-absorption of oxygen molecules occurs, resulting in the increase/reduction of the photocurrent.) According to the result, we found that having the three layers of drop casting has the best performance: responsivity = 1267.52 A/W, rising time = 4.91 s, falling time = 8.24 s, Ion/ Ioff = 1.62, It confirms the truth of using graphene as a base can improve responsivity and response time.