矽基鍺錫光電導式紅外線偵測器之研製

在本論文中，主要目標為研製近紅外光矽基鍺錫MSM(Metal-Semiconductor-Metal)正向入射式光偵測器，鍺錫合金之材料相對於矽與鍺而言具有高響應、吸收波段長等特點，在未來的光纖通訊及積體電路的應用上有很高的應用潛力。由於利用光纖或是波導取代金屬導線傳輸訊號是目前的研究趨勢，欲建構高速光連接晶片則必須先發展出高性能的矽基光電元件。本論文利用鍺錫合金光吸收波段較長的特點成功研製出MSM正向入射式光偵測器，其中在偏壓5伏特、光源波長在1500~1590nm時，鍺錫光偵測器的光響應度之衰減速度明顯小於鍺光偵測器；而偏壓21伏特、光源波長在1550nm時，鍺光偵測器的光響應度約為0.45A/W；鍺錫光偵測器的響應度約為0.12A/W，未來可以由沉積更厚的主動層以及增加鍺錫合金內錫的含量，使其響應度有更進一步的提升並且涵蓋更長波長，對於取代金屬導線使用光來傳輸訊息而言，是個重要且具有潛力的方法。

關鍵字

光響應度；紅外光；光偵測器；鍺錫合金

並列摘要

This thesis presents the fabrication and characterization of Si-based GeSn photoconductive detectors. With a higher responsivity than Si and Gephotodetectors at near-infrared wavelengths, GeSn photodetectors are at-tractive for applications in optical fiber communications and integrated cir-cuit in the future. Optical interconnection on Si is one of the potential solutions for data transportation to break the bandwidth bottleneck of current metal-based in-terconnection. It is thus essential to develop various high-performance Si-based photonic devices. In this thesis, we develop normal incident metal-semiconductor-metal GeSn photodetectors. At a bias voltage of 5 volt, the responsivity decay of GeSn photodetector is obviously slower than the Ge reference photodetector in the wavelength of 1500nm~1590nm. At a higher bias voltage of 21 volt, we obtain a responsivity of 0.45A/W at 1550 nm for the Ge photodetector, and 0.12A/W for the GeSn photodetector. Further en-hancement in responsivity is possible by increasing the active layer thick-ness and/or the Sn composition in the photon-absorption layer. Those re-sults suggests that GeSn-based photodetectors are attractive for applications in optical interconnection.

並列關鍵字

infrared ； photodetectors ； GeSn alloys ； responsivity

參考文獻

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國際替代計量

矽基鍺錫光電導式紅外線偵測器之研製

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