摘要
探針卡(Probe card)是用於電子封裝IC前段製程中測試良率的重要工具，它是藉由探針卡上的探針與待測物接觸，量測電訊並將電性信號回傳至測試機，進而判斷晶粒的好壞。近年來積體電路的發展依照摩爾定律的預測快速進步，晶片上銲墊的面積逐漸縮小且間距也越來越小，故探針卡的針測密度也必須提高。有別於傳統懸臂式探針卡的結構，垂直式探針卡的結構能提供更高的針測密度，為較適合未來測試高密度晶片的探針卡類型。 本研究中建立了不同行程之晶圓針測實驗，並利用AFM(Atomic force microscopy)量測銲墊上的刮痕幾合。此外建立有限元素分析模型來進行晶圓針測模擬，利用3D的模型來模擬銲墊與探針的力學行為，由於探針在銲墊上不同的滑動模式會影響刮痕的幾合，故本文深入探討探針卡結構中的下平板(Lower Guide Plate)對探針的影響，以及對刮痕幾合的影響，而後藉由實驗與模擬驗證，設計出能夠控制刮痕的新型下平板，並藉由有限元素模型預測30種不同幾合參數的下平板其刮痕深度與針測行程(Overdrive)的關係曲線。並提供此表作為不同尺寸的銲墊作為選擇的依據，以期降低銲墊損傷風險。
並列摘要
Probe card is a very important tool for electronic packaging wafer testing. The electrical properties of the circuit can measured from the contact surface between probes and bonding pads. Probe tester base on the open/short electrical signal to determine yield of die. In recent years, integrated circuit develop very fast and follow the prediction of Moore’s Law. Pad shrinkage its area and pitch, so high density probe card is required to measure electrical signal. Vertical probe card can provide high density needle to fulfill the future requirement. In this study, the probing needle testing set up to study the probing mark scale under various overdrive distance on Al pad with vertical needles. AFM is employed to observe and measure the size of scratches. A three-dimensional finite element model was created to simulate the probing behavior and compared with the experimental results. Because different types of slip mode on pad would influence mark size , so this study focus on how to control mark depth by lower guide plate , after the verification of FEA model with experiment results , we use this FEA model to design 30 set of lower guide plate with different parameters. And predict relationship between overdrive and mark depth. Finally use the mentioned relationship to choose a better probe card and reduce the pad damage while wafer probing.