以化學浴沉積法製作多層硫化銻-石墨烯複合材料之光響應研究

The Photo Response Study of Fabricated Layer by Layer Antimony Sulfide - Graphene Composite Material by Chemical Bath Deposition

魏子棠(Tzu-Tang Wei)

指導教授 ： 丁初稷

國立中正大學/工學院/光機電整合工程研究所/碩士(2015年)

摘要

本研究利用 UV/O3 在化學氣相沉積法成長的石墨烯表面進行改質，將疏水性的石墨烯表面變成親水性，再利用化學浴沉積法沉積硫化銻薄膜，並利用硫化銻半導體增加石墨烯可見光波段的反應。其中製作了多層硫化銻 /石墨烯元件與硫化銻 /石墨烯元件，並加以比較，發現堆疊石墨烯元件相較於未堆疊石墨烯元件能夠擁有更好的光電流與反應時間，並討論堆疊元件在不同光強度與電壓下的特性，其中以堆疊三層硫化銻 / 石墨烯元件在 405 nm 的氙光源下有最好的響應度，其響應度為 229 A/W。

關鍵字

硫化銻 ； 化學浴沉積法 ； 石墨烯 ； 光偵測器

並列摘要

In this study, antimony sulfide (Sb2S3) was used to improve the optoelectronic characteristic of graphene. Graphene was firstly grown on copper foil by using chemical vapor deposition (CVD) technique and the hydrophobic property of graphene was then modified by ultraviolet/ozone into hydrophilic property. Sb2S3 semiconductor thin films with different stacking structure were deposited onto graphene by chemical bath deposition (CBD) technique to improve the photoresponse on visible light of graphene. Multilayer stacking Sb2S3/graphene and non-stacking single-layer Sb2S3/graphene device were fabricated and the optoelectronic properties were compared and studied. The experimental result showed the multilayer stacking Sb2S3/graphene device produced higher value of photocurrent and has shorter time response compared to non-stacking single-layer Sb2S3/graphene device. The optoelectronic characteristic of the multilayer stacking Sb2S3/graphene was measured with different incident light power and voltage. 3-layer stacking layer-by-layer Sb2S3/graphene showed the highest responsivity under irradiation of Xenon lamp with incident light of 405 nm, which is 229 A/W.

並列關鍵字

antimony sulfide ； chemical bath deposition ； graphene

參考文獻

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