混入黑磷至聚3-己烷噻吩以改善聚3-己烷噻吩/矽異質結元件整流和光電特性的研究

Incorporation of black phosphorus into poly(3-hexylthiophene)/Si devices resulting in improvement in rectifying and optoelectronic performances

林鴻志(Hong-Zhi Lin)

指導教授 ： 林祐仲

國立彰化師範大學/理學院/光電科技研究所/碩士(2017年)

摘要

本研究將分別進行兩個實驗，第一個實驗研究是將二維材料-黑磷(black phosphorus，簡稱BP)混入至3-己烷噻吩[poly(3-hexyithiophene)，簡稱P3HT]以改善P3HT/n-Si元件整流和光電特性。研究結果顯示，元件的整流特性受到P3HT層的效應影響以及正向電壓-電流受熱離子放射(Thermionic Emission，簡稱TE)和空間電荷限制電流(Space Charge Limited Current，簡稱SCLC)機制所限制，然而將BP混入P3HT溶液中提升了元件的電洞遷移率以及界面修飾，改善元件的整流和光電特性。
第二個實驗是對P3HT/n-Si元件在不同的溫度下的傳輸機制所做的研究。元件在室溫中，載子在低電壓的傳輸機制是由熱離子放射所主導，然而電流在高電壓是受到串聯電阻以及空間電荷限制電流的機制所限制。之後我們再利用不同的溫度下對元件進行研究及探討其特性，發現理想因子隨著溫度降低而有所增加，為了得到更多更好的解釋，我們將BP混入至P3HT溶液中為了改善P3HT層的整流特性，所以製作出P3HT:BP/n-Si元件，結果顯示BP混入至P3HT導致電洞遷移率有所增加而抑制P3HT層的整體效應。

關鍵字

聚合物 ； 電特性 ； 矽 ； 二極體 ； 二維材料 ； 聚3-己烷噻吩

並列摘要

The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.
The electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3- hexylthiophene) (P3HT)/n-type Si deviceswere investigated. Carrier transport in the lowforward-voltage region at room temperature is dominated by thermionic emission (TE). However, at high voltages the current is limited by series resistance and space charge limited current (SCLC) mechanisms. It is shown that the ideality factor increases as temperature decreases, because of a TE-to-SCLC transition. In order to obtain a greater understanding of the transition from TE to SCLC behavior, few-layer black phosphorus (BP) was incorporated into P3HT (i.e., P3HT:BP) and the P3HT:BP/n-type Si devicewas fabricated. However, the incorporation of BP into P3HT leads to a significant increase in the hole mobility, suppressing the bulk effects of the P3HT layer.

並列關鍵字

Polymer ； Electrical properties ； Si ； Diodes ； Two-dimensional materials ； Poly(3-hexyithiophene)

參考文獻

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