- 學位論文
以高密度電漿化學氣相沉積系統製備氫化矽晶薄膜之薄膜特性與品質之研究
The properties and quality of hydrogenated crystalline silicon thin films prepared by the HDP-CVD
摘要
本研究使用高密度電漿化學式氣相沈積(High density plasma chemical vapor deposition, HDPCVD)製備一氫化晶矽(Hydrogen silicon, Si:H)薄膜。本實驗藉由改變不同氫氣流量稀釋比(R= H2/SiH4)、不同的製程腔體壓力與不同的上電極輸入功率，以探討不同製程參數對氫化矽薄膜之影響。另外，本研究更藉由場放射式顯微鏡(Field Emission Scanning Electron Microscope, FESEM)，觀察斷面沉積型態與沉積厚度、傅立葉轉換紅外線光譜儀(Fourier transform infrared spectroscopy, FTIR)分析微晶矽薄膜結構之鍵結(Local bond configuration)及特性，並利用微拉曼光譜分析儀(micro Raman spectrum)分析於不同功率、氫氣流量下所製備出之微晶矽薄膜的結晶度(Crystallinity, Xc)。其中，霍爾量測(Hall measurement)係用以測量其電特性。
並列摘要
In this study, the hydrogen silicon thin films were prepared by the high density plasma chemical vapor deposition. The experiments were designed with the different process parameters such as the different hydrogen (H2) gas flows, different pressure of cavity and different radio frequencies (RF) power of upper electrode to discuss the effects of hydrogen silicon thin films. In the analyzing parts, the Field Emission Scanning Electron Microscope was used to observe the deposition type and the thickness of cross section; the Fourier transform infrared spectroscopy was used to discuss the properties of local bond configuration; and the micro Raman spectrum was used to analyze the crystallinity of hydrogen silicon thin films prepared by the different process with different hydrogen (H2) gas flows and different radio frequencies (RF) power. Finally, Hall measurement was used to measure the electrical properties of the hydrogen silicon thin films.