使用高純度ZnO粉末製備ZnO靶材之研究

Preparation of ZnO target using high purity zinc oxide powder

楊宗霖(Tsung-Lin Yang)

指導教授 ： 熊京民

國立屏東科技大學/工學院/機械工程系所/碩士(2011年)

https://doi.org/10.6346/NPUST.2011.00256

摘要

本論文為製備一氧化鋅系靶材，其目的為應用於透明導電膜材料領域。
本論文將分為二大主要部分探討，分別為（1）ZnO粉體燒結以製備靶材部分；（2）與利用ZnO靶材製備透明導電膜
（1）ZnO粉體燒結製備ZnO靶材
本研究以粉末純度與燒結溫度為變因，其中，粉末的純度分別為99.8及99.99％。而燒結溫度則設定為1100、1200、1300及1400℃並持溫兩個小時，爾後，並藉由XRD、SEM、四點探針分析氧化鋅靶材之微結構及電特性研究。
（2）ZnO陶瓷靶製備透明導電膜特性研究
本研究以自製之氧化鋅系陶瓷靶利用電子束蒸鍍機進行鍍膜，其中，選用燒結溫度為1400℃並持溫兩個小時，純度為99.8％之ZnO陶瓷靶，並藉由XRD、四點探針、UV-VIS光譜儀分析ZnO膜之微結構及光電特性之研究。

關鍵字

氧化鋅 ； ZnO ； 透明導電膜

並列摘要

The Contents of Abstract in this Thesis:
The thesis is using zinc oxide powder for the preparation of zinc oxide target, and its application in transparent conductive film.
This study was divided into two major parts (1) using ZnO powder to prepare ZnO target; (2) using ZnO target to prepare transparent conductive ZnO film.

(1) ZnO target
This parameters in this part of the thesis were the purity of powder and the sintering temperature. The purity of the powder were 99.8 and 99.99%. The sintering temperatures were 1100, 1200, 1300 and 1400 ° C for two hours.The microstructural and electrical properties of the ZnO target were analyzed by XRD, SEM, and four-probe equipment. the characteristics of zinc oxide and zinc oxide aluminum ceramic target.

(2) ZnO transparent conductive oxide prepared using ZnO target
The ZnO transparent conductive oxide was prepared from the ZnO target using E-beam evaporation system. The zinc oxide ceramics target was sintered at 1400 ℃ for two hoursand the purity of ZnO ceramic target was 99.8%. The microstructural, and opto- electrical properties were analyzed by XRD, four-probe equipment and UV-Vis spectrometer.

並列關鍵字

zinc oxide ； ZnO ； transparant conductive oxide

參考文獻

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