Cu、Mn、Ag元素對Ni-Cr基薄膜電阻之特性研究

A study on the characteristics of Ni-Cr based with Cu, Mn, Ag Thin Film Resistors

馮東仁(Tung-Jen Feng)

指導教授 ： 李英杰

國立屏東科技大學/工學院/材料工程研究所/碩士(2014年)

https://doi.org/10.6346/NPUST.2014.00202

摘要

本實驗利用直流磁控、射頻磁控以共濺鍍的方式沉積Ni-Cr-Ag、Ni-Cr-Cu、Ni-Cr-Mn與Ni-Cr-Mn-Cu薄膜。探討不同元素摻雜對薄膜之膜厚、相成分、顯微結構及電性等影響。在Ni-Cr-Ag部份，改變Ag摻雜含量，初鍍膜經由XRD分析皆為非晶質薄膜，在退火400 ℃會析出銀的結晶相，Ni-Cr-Ag薄膜之電阻率會隨著銀的添加量增加而下降。在Ni-Cr-Cu部份，改變 Cu摻雜含量，在退火400 ℃會析出銅的結晶相，添加銅可以使鎳鉻薄膜顆粒細化並增加硬度值2%，在退火250℃時，電阻率會隨著銅的添加量增加而上升，由307 μΩ–cm升至612 μΩ–cm，TCR值逐漸由66 ppm/℃上升為72 ppm/℃。在Ni-Cr-Mn部份薄膜改變Mn含量，在退火500 ℃，會產生鎳以及四氧化三錳的結晶相，錳的添加可以提升薄膜5 %硬度值，在退火250℃時，最佳的電阻率為 428 μΩ–cm，錳的添加之TCR值為6.4 ppm/℃。在濺鍍Ni-Cr-Mn-Cu部份，改變Mn、Cu比例，在400 ℃以下，經XRD分析薄膜均為非晶質。添加錳銅元素的比例在0.7時，退火250 ℃之電阻率為556 μΩ–cm，TCR值為5.6 ppm/℃，退火300 ℃時有最高的電阻率(627 μΩ–cm)以及伴隨23 ppm/℃之TCR。

關鍵字

Ni-Cr-Ag ； Ni-Cr-Cu ； Ni-Cr-Mn ； Ni-Cr-Mn-Cu ； 電阻率 ； 電阻溫度係數

並列摘要

The objective of this experiment is to make a series study of the Ni-Cr-Ag, Ni-Cr-Cu, Ni-Cr-Mn and Ni-Cr-Mn-Cu thin films which are prepared by DC and RF co-sputtering. The influence of doping elements on film thickness, phase structures, microstructures and electrical properties of Ni-Cr based thin films are investigated. In Ni-Cr-Ag thin films, it found that the as-deposited films were an amorphous structure by XRD analyzing. The silver precipitation were observed in the films after 400 °C annealing for 6h. The resistivity of Ni-Cr-Ag films was decreased with increasing of silver amount.
In Ni-Cr-Cu thin films, it found that the as-deposited films were an amorphous structure by XRD analyzing. The copper precipitation were found in the films after 400 °C annealing for 6h. The finer particle size was observed when the copper was added to the Ni-Cr thin films. At 250 ℃annealing, the resistivity of Ni-Cr-Cu films was increased with increasing of the copper amount, which was increased significantly from 307 μΩ-cm (0% Cu) to 612 μΩ-cm (27.4% Cu) ,and the temperature coefficient of resistance (TCR) was from 66 ppm/℃to 72 ppm/℃.

In Ni-Cr-Mn thin films, Mn3O4 and Ni phases were appeared in the films after 500 °C annealing for 6h. The hardness of Ni-Cr films can be improved by manganese adding. The Ni-Cr thin films added with 22.9 mol.% Mn exhibited the best electrical properties, with a resistivity of 428 μΩ-cm and a TCR value of 6.4 ppm/℃after annealing at 250 C.
In Ni-Cr-Mn-Cu thin films, it found that the as-deposited films annealed at 400 °C were an amorphous structure by XRD analyzing. The Ni-Cr-Mn-Cu thin films at 0.7 ratio of Mn/Cu exhibited the electrical properties, with a resistivity of 556 μΩ-cm and a TCR value of 5.6 ppm/℃after annealing at 250 C. When Ni-Cr-Mn-Cu films annealed at 300 °C, it shows that the resistivity is 627μΩ-cm with 23 ppm/℃of TCR.

並列關鍵字

Ni-Cr-Ag ； Ni-Cr-Cu ； Ni-Cr-Mn ； Ni-Cr-Mn-Cu ； 電阻率 ； 電阻溫度係數

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