Cu-X ( X = Mn、Ta、W) 薄膜特性之研究

本實驗係利用直流磁控與射頻磁控以共濺鍍的方式製備Cu-Mn、Cu-Ta、Cu-W二元合金薄膜於玻璃及氧化鋁基板，探討不同元素添加及退火溫度對於Cu-X薄膜之相結構、顯微結構與電性等影響。在Cu-Mn部分，當氮氣退火200 °C時，改變薄膜中Mn的添加含量，XRD分析皆為非晶薄膜，而氮氣退火溫度到達300 °C時會產生Cu結晶相，且隨著Mn添加量增加會漸漸形成MnO相，退火400 °C及500 °C會有Cu結晶相及Cu2O和MnO產生。在電性分析上，電阻率會隨退火溫度上升與Mn的含量增加而提高，在退火400°C以下時，整體TCR值則隨著Mn含量的增加而往負值移動，Mn含量9.8 at.%退火200 °C時，擁有最佳的平均TCR值為-1 ppm/°C，其電阻率為212 μΩ-cm。在Cu-Ta部分，試片退火200 °C~ 500°C處理後，經XRD分析後，均只有Cu之結晶相。試片氮氣退火300 °C、260 °C、200 °C經由TEM分析後，均有發現微結晶與非晶的區域，並在擇區繞射中觀察到Cu結晶與CuO相，而在Ta含量為10.8 at.%則均有發現雙晶結構的產生。在電性分析上，電阻率會隨著Ta含量增加而提升，整體TCR值則隨著Ta含量的增加而往負值移動，在氮氣退火200°C於Ta添加量19.7 at.% 時有較佳的平均TCR為56 ppm/°C，電阻率為192 μΩ-cm。在Cu-W部分，試片氮氣退火400 °C以下時，經由XRD分析均發現Cu之結晶相，而隨著W的添加量增加而提升，在氮氣退火500 °C時，會有Cu64O與W的結晶相產生，而Cu結晶性會因W含量增加而降低。試片氮氣退火200 °C、300 °C、500 °C經由TEM分析後，均有發現微結晶與非晶的區域，並在擇區繞射中觀察到Cu結晶與W結晶及Cu64O相。在電性方面， TCR值則會隨著W元素添加量增加而降低，當W含量49.4 at.%退火500 °C時，擁有最佳的平均TCR值為-27 ppm/°C，其電阻率為266 μΩ-cm。

關鍵字

Cu-Mn ； Cu-Ta ； Cu-W ；電阻率；電阻溫度係數

並列摘要

In this study, Cu-Mn, Cu-Ta and Cu-W thin films are prepared on glass and Al2O3 substrates by DC and RF magnetron co-sputtering. The effects of addition amount and annealing temperature on the composition, phase evolution, microstructures and electrical properties of Cu-X thin films were investigated. 　　For Cu-Mn thin films, when the annealing temperatures is at 200 °C, the Cu-Mn thin films with an amorphous structure was observed using X-ray diffraction (XRD). However the MnO and the Cu2O peaks were appeared at 400 °C annealing in N2 atmosphere. The resistivity of Cu-Mn films was increased with increasing of Mn amount and annealing temperatures. The Cu-Mn films with 9.8 at.% Mn addition annealed at 200 °C was exhibited the best electrical properties, such a resistivity of 212 μΩ – cm and a temperature coefficient of resistance (TCR) value of -1 ppm/°C. 　　For Cu-Ta thin films, the Cu crystalline phases were observed in the Cu-Ta thin films when the annealing temperatures were set up 200 °C~500 °C in N2 atmosphere. There are Cu twins and CuO phases observed in the Cu-Ta thin films using transmission electron microscopy (TEM). The resistivity of Cu-Ta films was increased with increasing of Ta amount, and the TCR value becomes convergence and close to zero. The Cu-Ta films with 19.7 at.% Ta addition annealed at 200 °C was exhibited higher resistivity 192 μΩ-cm with 56 ppm/°C of TCR. 　　For Cu-W thin films, Cu crystalline phase was appeared in the Cu-W films at  400 °C annealing in N2 atmosphere. However, W crystalline phase and Cu64O phase were observed in the Cu-W films using TEM analysis when the annealing temperature was set at 500 °C in N2 atmosphere. The resistivity of Cu-W films increases obviously with increasing of W amount. The TCR values were decreased with increasing of W amount. Cu-W films with 49.4 at.% W amount and annealed at 500 °C which was exhibited the best TCR -27 ppm/°C with 266 μΩ-cm of resistivity.