- 學位論文
氮化銦鎵/氮化鎵發光二極體之極化效應分析
InGaN / GaN Light Emitting Diode Polarization Analysis
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延伸閱讀
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- 凌碩均、張士邦、李鎮宇、盧廷昌、郭浩中（2010）。非極性及半極性氮化鎵發光二極體之進展。光學工程，(111)，1-9。https://doi.org/10.30011/OE.201007.0001
- Chen, L. Y. (2013). 極化導致氮化銦鎵/氮化鎵奈米柱發光二極體陣列的光學特性 [doctoral dissertation, National Taiwan University]. Airiti Library. https://doi.org/10.6342/NTU.2013.02972
- Li, Z. (2009). Reliability study of InGaN/GaN light-emitting diode [master's thesis, The University of Hong Kong]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0029-1812201200016420
- 林偉聖（2011）。InGaN-Based Alternating Current Light-Emitting Diodes with AlGaN/GaN Schottky Barrier Diodes〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-1903201314425747