以氮催化結晶法製備摻鎵氧化鋅薄膜應用於觸壓感測之研究

Study of Ga-doped ZnO layer with nitrogen mediated crystallization to apply on touch sensing

姜平泰(Ping-Tai Jiang)

指導教授 ： 林彥勝

義守大學/智慧科技學院/電子工程學系/碩士(2022年)

摘要

本論文主要研究是以摻鎵氧化鋅(Ga doped Zinc Oxide, GZO)為材料應用於觸壓感測上，並以氮催化結晶(Nitrogen-Mediated Crystallization, NMC)法分別沉積GZO層，以進一步改善GZO薄膜觸壓感測特性。研究中先製成不同厚度為200 nm、300 nm及400 nm 之GZO薄膜，進行觸壓感測分析，選取具有最佳靈敏度及穩定度之薄膜厚度。接著再研究於GZO薄膜中分別置入不同厚度100 nm、150 nm及300 nm具NMC結構之GZO薄膜，以分析具不同NMC GZO薄膜對於靈敏度與穩定度之影響，並選取具適當的觸壓感測特性之結構。最後再調整通入NMC GZO薄膜沉積時的氮氬氣通量(N2/Ar)分別為1/ 8、1/ 10及1/ 12 (sccm)以改變NMC GZO薄膜粒徑結構，使其能夠再提升GZO觸壓感測特性。研究同時亦以霍爾效應量測系統量測GZO薄膜電性，再以場發射掃描式電子顯微鏡(FESEM)及原子力顯微鏡(AFM)進行GZO薄膜表面形貌觀察與結晶狀態觀察，最後以X光繞射儀(XRD)進行薄膜結晶特性、薄膜晶粒大小(Crystallite size)及薄膜晶格應變(Lattice strain)分析。在本論文研究中，發現以氮氬氣通量比1/ 8 (sccm)下沉積形成GZO (200 nm)/ NMC GZO (100 nm)/ PC結構應用於觸壓感測時具有較佳的靈敏度，比較純GZO (300 nm)提升約6.12 %由1.046提升至1.110，此驗證藉由製程優化GZO薄膜能使其更具備應用於觸壓感測器之潛力。

關鍵字

摻鎵氧化鋅 ； 氮催化結晶製程 ； 可撓式基板 ； 觸壓感測 ； 射頻磁控濺鍍

並列摘要

In this study, the Ga-doped ZnO (GZO) material had been used to apply on touch sensors. Nitrogen-Mediated Crystallization(NMC) method was used to form various GZO thin film. Which will further improve the GZO touch sensing properties. At first, GZO film had been deposited with different thicknesses of 200 nm, 300 nm and 400 nm, and then the optimal thickness of thin film with best sensitivity and stability was selected. Then, the different thickness GZO films with NMC structures had been deposited, the influence on the touch sensing properties of GZO films with different NMC structures had been analyzed, and then the optimal structure with best sensitivity and stability was selected. Finally, the flux ratio of nitrogen and argon (N2/Ar) had been adjusted during the NMC GZO film was deposited as 1/ 8, 1/ 10 and 1/ 12 (sccm), respectively. The crystalline structure of the NMC GZO layer was analyzed to improve the touch sensing properties. At the same time, the electrical properties of GZO thin films were measured by Hall effect measurement system, and the surface morphology and crystalline state of GZO thin films were observed by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). Finally, X-ray diffractometer (XRD) was used to analyze the crystalline properties, lattice strain of the film. In this study the structure of GZO (200 nm)/NMC GZO (100 nm)/PC is deposited with a nitrogen-argon flux ratio of 1/ 8 (sccm), which has better optimal touch sensitivity, and compare with as grown GZO (300 nm) increased as 6.12 % from 1.046 to 1.110, which confirm that designed GZO thin film has the potential to apply on touch sensing.

並列關鍵字

Ga-doped ZnO ； Nitrogen-Mediated Crystallization ； flexible substrate ； touch sensing ； RF magnetron sputtering

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