本研究採用簡單且低成本的加熱及常壓電漿實驗方式在銅片上成長銅氧化物奈米線膜層,利用自製的常壓電漿鍍膜系統及加熱設備的混成製程(PT-300空氣電漿300 °C-10 min +熱氧化法300 °C-50 min),在低溫300 °C下所生長出來的銅氧化物奈米線膜層具備優良的比表面積及薄膜相對穩定的特性,並且在0V(vs. RHE)時有最佳的光電流密度約為-2.92 mA/cm2。為了進一步提升整體光電化學產氫之效率,本實驗另使用常壓電漿噴流系統搭配化學氣相沉積法,在高比表面積的銅氧化物奈米線膜層上,沉積二氧化鈦奈米顆粒形成PN異質結構,有效提升電子-電洞對分離的效率。實驗結果在TiO2-9s(PT-300 + 沉積 TiO2奈米顆粒9 s)時,測得在0 V(vs. RHE)時有最佳的光電流密度約為-6.37 mA/cm2,其太陽能產氫效率最大可達約1.1%。
In this study, a simple and low-cost experimental methods was used to fabricate copper oxide nanowire on copper foil. The experimental process will be preformed by using the thermal oxidation method and the mixing process (PT-300, Air plasma 300 °C-10 min + Thermal oxidation 300 °C-50 min) of the heating plate and atmospheric pressure plasma system. The copper oxide nanowires have excellent specific surface area and relatively stable films grown at a low temperature( 300 ° C) ,and the maximum photocurrent density value of the monolayer was -2.92 mA/cm2 measured at 0 V (vs. RHE). In order to further improve the overall photo-electro-chemical (PEC) hydrogen production efficiency, this experiment also used atmospheric pressure plasma system with chemical vapor deposition to deposit titanium dioxide nanoparticles on copper oxide nanowires with high specific surface area to form P-N hetero-structure, that obviously increase efficiency of electron-hole pairs separation. Experimental results show that the maximum photocurrent density value of the P-N hetero-structure film was -6.37 mA/cm2 at TiO2 - 9s (PT-300 + TiO2 nanoparticle deposition for 9s) at 0 V (vs. RHE), and the maximum solar hydrogen conversion efficiency is about 1.1%.