研究以有機金屬化學氣相沉積氮化鎵與氮化鋁鎵族薄膜之破裂行為

The fracture behaviors of GaN and AlGaN thin films deposited by using metal-organic chemical vapor deposition

蔡雅惠(Ya-Hui Tsai)

指導教授 ： 簡賸瑞

義守大學/理工學院/材料科學與工程學系/碩士(2016年)

摘要

利用奈米壓痕儀與微小維氏硬度儀，分析氮化鎵與氮化鋁鎵薄膜之奈米機械性質以及破裂行為。以有機金屬化學沉積氮化鎵與氮化鋁鎵薄膜於氧化鋁基板上。奈米壓痕儀搭配連續性勁度量測系統，量測氮化鎵以及氮化鋁鎵薄膜之硬度與楊氏模數，其值分別為15GPa (17GPa)與240GPa (300GPa)。壓痕曲線之負載過程中有多個斷點或轉折現象，說明了氮化鎵與氮化鋁鎵薄膜因奈米壓痕所導致之材料變形行為並不包含應力所引發之相變化現象。此外，氮化鎵與氮化鋁鎵薄膜之破裂強度以及行為亦在本研究討論。

關鍵字

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並列摘要

In this study, the nanoscale mechanical properties and microscale fracture behaviors of GaN and Al0.08Ga0.92N thin films are investigated by means of nanoindentation and micro-Vicker indentation, respectively. 　　　　
　　The GaN and Al0.08Ga0.92N thin films are deposited on the sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) method. The hardness and Young’s modulus of GaN and Al0.08Ga0.92N thin films are measured using a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) mode. The values of the hardness and Young’s modulus are about 15GPa (17GPa) and 240GPa (300GPa) for GaN (Al0.08Ga0.92N) thin films, respectively. The absence of discontinuities are in the unloading segments of load-displacement curve suggests that no pressure-induced phase transition was involved. In addition, the micro-Vicker indentation-induced fracture behaviors of GaN and Al0.08Ga0.92N thin films are also discussed.

並列關鍵字

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參考文獻

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