磁控濺鍍氧化亞銅薄膜特性之研究

Study of the Properties of the Cuprite Films by Magnetron Sputtering

吳智凱(Jhih-Kai Wu)

指導教授 ： 洪博彥

義守大學/理工學院/材料科學與工程學系/碩士(2016年)

摘要

本實驗使用RF 磁控濺鍍法製做氧化亞銅薄膜，利用摻雜不同銅含
量(未摻雜、1wt%、3wt%、7wt%)之氧化亞銅靶材進行濺鍍，以氬氣最
為濺鍍氣氛，並通入不同氮氣流量濺鍍於玻璃基板與矽基板，分別進行
顯微結構分析(FE-SEM)、結晶結構分析(XRD)、UV-visible 以及霍爾量測探討氧化亞銅薄膜之性質。
由實驗中得知靶材銅添加量增加，能夠使薄膜電阻率下降。隨著通
入氮氣之流量增加，能夠獲得氧化亞銅薄膜。摻雜1wt%銅之氧化亞銅
靶，通入10sccm 之氮氣，沉積於矽基板能夠獲得最佳之電性，電阻率、
遷移率與載子濃度分別為1.29 x 10-3Ω-cm、1.94 x 103 cm2/Vs 以及1.98 x1017 cm-3。

關鍵字

氧化亞銅 ； 磁控濺鍍法

並列摘要

In this study, we prepared cuprous oxide thin films on the glass substrate and silicon substrates by RF magnetron sputtering method with different copper contents in the copper oxide target (undoped, 1wt%, 3wt%, 7wt%). The effect of nitrogen content on the microstructure and electrical property of cuprous oxide films will also be investigated in this study. The crystal structure was characterized by XRD(PANalytical X'Pert PRO). The surface microstructure is analyzed by FESEM(Hitachi S-4700). The electrical and optical properties are measured by Van-Der Paw method and UV-visible photoelectrometer.
In this study, we found that the addition of Cu in the target can significantly descreased the electrical resistivity of cuprous oxide films. On the other hand, the addition of nitrogen during sputtering can also improve the electrical conductivity of cuprous oxide films as a result of enhancement of cuprous oxide crystallization. The optimum electrical resistivity of cuprous oxide film was obtained of 1.29 x 10-3 Ω-cm with carrier mobility of 1.94 x 103 cm2/Vs and carrier concentration of 1.98 x 1017 cm-3. The optical transmissions of cuprous oxide films are ranged from 51~78% with the optical band gaps of 2.2 ~ 2.6 eV depending on the concentration of Cu and N2 additions.

並列關鍵字

cuprite ； sputter

參考文獻

[6]. 麻蒔立男，薄膜，瑞昇文化事業股份有限公司，2012年。

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