基於TSV的3D封裝建模與電氣模擬

Modeling and Electrical Simulation of TSV-Based 3D Package

張智閔(Zhi-Min Zhang)

指導教授 ： 黃有榕

共同指導教授 ： 潘宗龍(Chung-Long Pan)

義守大學/電機資訊學院/電子工程學系/碩士(2018年)

摘要

隨著摩爾定律的預測發展，3D-IC提供一種提高集成度的方法。其中矽穿孔(Through Silicon Via, TSV)為其中的關鍵組成，因為矽穿孔提供3D-IC封裝新的互連技術。矽穿孔技術的優點包括有:多功能異質整合、功率損耗減少、產品微型化、元件性能提升。本研究利用高頻結構模擬軟體(ANSYS HFSS)對矽穿孔模型進行訊號傳輸模擬，然後擷取矽穿孔模型的S參數(S-parameters)。
本論文研究多個矽穿孔之間的傳輸訊號特性，並探討當更改TSV的結構參數對每個頻段的影響，例如:絕緣層厚度、TSV直徑、高度、間距、RDL寬度、矽基板導電率。觀察更改錐形TSV的角度對傳輸訊號特性的影響，並與圓柱、同軸、不規則之TSV比較。還有模擬當TSV在製程過程中產生空隙會對傳輸訊號特性之影響，藉由ANSYS HFSS模擬TSV結構內如果有空隙的S參數與TSV結構內沒有空隙的S參數進行比對。最後利用五層daisy chain TSV模擬凸塊(Bump)開路或短路對訊號傳遞影響。

關鍵字

矽穿孔 ； 散射參數

並列摘要

3D-IC evolved with the prediction of Moore's Law, 3D-IC provides a way to improve integration, among which Through Silicon Via (TSV) is a key component, because TSV provides 3D-IC package new interconnect technology. The advantages of TSV technology include: versatile heterogeneous integration, reduced power loss, product miniaturization, and improved component performance. In this thesis , the EM simulation software (ANSYS HFSS) was used to simulate the signal transmission of the TSV model, and then the S-parameters of the TSV model were extracted.
This thesis first studies the transmission signal characteristics between multiple TSVs and discusses the effects of changing the structural parameters of TSV, such as: insulation thickness, TSV diameter, height, pitch, RDL width, silicon substrate conductivity. The changing of the angle of the tapered TSV will affect the transmission signal characteristics, and the results are also compared with the cylindrical, coaxial, and irregular TSV shapes. Second, we study the S-parameter of different position of open or short defects in TSV. Open defects may occur when a bump, connecting two TSVs, is not properly realized because of an inaccurate metal filling. The short defects can be created with the expansion of the bump, RDL, during the stacking process. In second part, the S-parameter of TSV without defect is analysis as a reference; then we analyzed the S-parameter curves of TSV with open/short defects. The analysis of the effects of any position and different quantities of defects can provide a help for a non- invasive defect detection.

並列關鍵字

3D-IC ； Through Silicon Via ； defect analysis

參考文獻

[1] http://www.nims.go.jp/mana/research/results/2011/09211/

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