砷化銦的選擇性液相氧化與其在反向式砷化銦鋁金氧半高電子遷移率電晶體之應用

Selective Liquid Phase Oxidation of InAs and Application to Inverted-Type InAlAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor

李宗穎(Tsung-Ying Lee)

指導教授 ： 李冠慰

義守大學/智慧科技學院/電子工程學系/碩士(2023年)

摘要

在本論文使用液相氧化法(Liquid Phase Oxidation, LPO)用於砷化銦的選擇性液相氧化與其在反向式(Inverted-Type)砷化銦鋁金氧半高電子遷移率電晶體(Metal-Oxide-Semiconductor High-Electron-Mobility Transistor, MOS-HEMT)之應用。以LPO氧化InAs覆蓋層的方式來取代傳統上需要先蝕刻覆蓋層的步驟，可有效減少因為蝕刻而造成的表面缺陷，而且製程上更為便宜且簡便。
元件特性方面，Inverted-type InAlAs MOS-HEMT經量測得到在VGS = 1.5V時最大汲極電流密度為379 mA/mm。在VDS = 1.5 V時最大轉導峰值為251 mS/mm，兩端反向崩潰電壓為-3.4 V。fT和fmax分別是13.7 GHz 和19.5 GHz，低頻雜訊在10 Hz為4.91×10-15 V2/Hz，和Inverted-type InAlAs HEMT相比可以得到更好的直流、高頻特性和低頻雜訊。

關鍵字

液相氧化法 ； 反向式 ； 金氧半高電子遷移率電晶體

並列摘要

In this study, we use the liquid phase oxidation (LPO) of InAs and its application to inverted-type InAlAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT). By replacing the traditional steps of etching the capping layer and oxidation the capping layer structure with LPO, surface defects caused by etching can be effectively reduced, and the process is cheaper and simpler.
As for the component characteristics, the inverted-type InAlAs MOS-HEMT is measured to have a maximum current density of 379 mA/mm at VGS = 1.5 V. The maximum transconductance peak at VDS = 1.5 V is 251 mS/mm and the breakdown voltage is -3.4 V. The fT and fmax are 13.7 GHz and 19.5 GHz, respectively, and the low-frequency noise is 4.91 × 10-15 V2/Hz at 10 Hz, which gives better direct current and high-frequency characteristics and low-frequency noise compared with the inverted-type InAlAs HEMT.

並列關鍵字

liquid phase oxidation (LPO) ； inverted-type ； metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT)

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