本論文以電漿輔助化學氣相沉積法(Plasma Enhanced CVD, PECVD) 於p-type 矽基板上成長SiO2薄膜,在沉積3種不同薄膜厚度(各別為3μm、 5.303μm及10.52μm)之複合基板下製作共平面波導(Coplanar waveguide, CPW)結構,使用晶圓探針的S參數量測及SOLT校正法量測CPW結構,藉由向量網路分析儀(Vector Network Analyzer, VNA)量測出的數據,進而探討與分析其薄膜與傳輸線的影響。
In this study, the SiO2 thin films with different thickness (3μm, 5.303μm and 10.52μm) were deposited onto p-type Si substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) method. The coplanar waveguide was fabricated on composite substrate. The S parameters were measured using on wafer Short-Open-Load-Thru (SOLT) calibration and high frequency probe. The characteristics between thin films and transmission line were analysis.