氧化銦薄膜之摻雜與性質研究

Study on the doping and properties of In2O3 thin films

吳宗翰(Tsung-Han Wu)

指導教授 ： 陳國駒

義守大學/理工學院/材料科學與工程學系/碩士(2018年)

摘要

本實驗利用射頻磁控濺鍍系統於石英玻璃基板上進行共濺鍍，分別使用DC POWER、RF POWER，改變沉積參數，如濺鍍氣氛、濺鍍瓦數，再經由不同的退火溫度進行快速熱退火處理，探討其氧化銦薄膜之摻雜性質影響。
實驗結果顯示，In2O3濺鍍氣氛通入氧氣氛時，會使結晶性質變差，晶粒尺寸變小，電阻率上升達8.81×〖10〗^4 Ωcm，而在可見光穿透率可高達91%，光學能隙為3.65eV。
In2O3薄膜在氧氣氛75%時經由快速熱退火(RTA)800℃，可得到最佳的品質因數(FOM)，電阻率下降至2.44×〖10〗^(-3)Ωcm，載子濃度8.33×〖10〗^19cm-3，在可見光範圍內穿透為88%，光學能隙為3.72eV。文獻中的In2O3：Cu電阻率在室溫下為 0.82×〖10〗^4-1.82×〖10〗^4Ωcm[25] ，藉由退火可以發現，電性明顯的提升，但隨著Cu摻雜量的增加，光電性質會逐漸下降。

關鍵字

氧化銦,共濺鍍,銅摻雜

並列摘要

In this experiment, on quartz glass substrates by RF magnetron sputtering system was used for co-sputtering, using DC POWER and RF POWER, respectively, to change the deposition doping number, such as sputtering atmosphere, sputtering wattage , and then through different annealing. The temperature was subjected to rapid thermal annealing treatment to investigate the influence of the properties of the In2O3 film.
The experimental results show that when the In2O3 sputtering atmosphere is introduced into the oxygen atmosphere, the crystal properties are deteriorated, the grain size becomes smaller, the resistivity rises to 8.81×〖10〗^4 Ωcm, and the visible light transmittance can be as high as 91% and band gap energy of 3.65eV.
The In2O3 film can obtain the best quality factor (FOM) by rapid thermal annealing (RTA) at 800 °C in an oxygen atmosphere at 75%, and the resistivity drops to2.44×〖10〗^(-3)Ωcm, and the carrier concentration is 8.33×〖10〗^19cm-3, the penetration in the visible range is 88%, band gap energy of 3.72 eV. The resistivity of In2O3:Cu in the literature is 0.82×〖10〗^4-1.82×〖10〗^4Ωcm[25] at room temperature. It can be found by annealing that the electrical properties are obviously improved, but with Cu doping as the amount increases, the photoelectric properties will gradually decrease.

並列關鍵字

In2O3,Co-Sputtering Deposition System,doping Cu

參考文獻

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