0.07Pb(Mn1/3Nb2/3)O3-0.468PbZrO3- 0.462PbTiO3壓電陶瓷雷射鍍膜之研究

Pulsed Laser Deposition of 0.07Pb(Mn1/3Nb2/3)O3-0.468PbZrO3-0.462PbTiO3 Piezoelectric Ceramics

蕭明恭(Ming -Gang)

指導教授 ： 魏萬益

大同大學/工程學院/材料工程學系所/碩士(2004年)

摘要

本研究是利用具有快速鍍膜及可保持多元系統化學計量比的脈衝雷射鍍膜法( Pulsed Laser Deposition,PLD )來製作多元系0.07(Pb(Mn1/3Nb2/3)O3-0.468(PbZrO3)-0.462(PbTiO3) (PMnN-PZ-PT)壓電薄膜本，實驗研究中亦嘗試改變YSZ中Y2O3之添加量，以改變YSZ晶格常數大小，得到不同晶格大小之YSZ緩衝層薄膜並在其上鍍上PMnN-PZ-PT壓電薄膜，由實驗結果知，不同Y2O3/ZrO2比例的YSZ與不同鍍膜溫度， YSZ上鍍上PMnN-PZ-PT壓電薄膜，會有必須經過額外的熱處理過程或增加鍍膜時間才有鈣鈦礦相形成，且在鍍上PMnN-PZ-PT壓電薄膜後會沈積出具有以Pb2Ti2O6結構(222)優選取向( preferred orientation )平面為主之焦綠石pyrochlore-type(π相)薄膜，此π相薄膜不具有壓電性，必須經過退火800oC後就能完全的消除，而在YSZ-4mole%鍍膜溫度在500oC、550oC作為buffer layer時會有PMnN-PZ-PT壓電薄膜優選方向生成之趨勢，在本研究論文中亦以SEM分析薄膜之表面及破斷面微結構分析。

關鍵字

雷射鍍膜

並列摘要

In this study, the zirconia with addition of Y2O3 4mol%, 3mol%, and 2mol%, were deposited on the silicon (100) wafer by PLD at different deposition temperatures. The structure of the as-deposited film was a cubic phase with (111) and/or (200) preferred orientation. After annealing at 1000 ℃ for 2 hours in the air, the cubic (200) was split into two peaks which were identified as the tetragonal (200) and (002). For YSZ-4mole%, the cubic (111) preferred orientation was preserved after annealing. The annealed YSZ films were chosen as the buffer layer for further deposition of the 0.07(Pb(Mn1/3Nb2/3))O3 - 0.468(PbZrO3) - 0.462(PbTiO3) (PMnN-PZ-PT) films. The structures of the as-deposited films were identified as pyrochlore-type Pb2Ti2O6 (222) and/or (400) preferred orientation. The perovskite structure was not formed in the as-deposited PMnN-PZ-PT films until it was annealed at 800 ℃ for 2 hours in the air. It was found that the pyrochlore-type structure was appeared no matter with the deposition time. The perovskite form was also found after 3 hours of deposition

並列關鍵字

Pulsed Laser Deposition

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