N-Slot感應式耦合電漿源平面顯示器蝕刻製程開發

INVESTIGATION OF FLAT PANEL DISPLAY ETCH-PROCESS BY INDUCTIVELY COUPLED PLASMA SOURCE WITH N-SLOT COILS

陳宇宏(Yu-Hung Chen)

指導教授 ： 魏哲弘

大同大學/工程學院/機械工程學系所/碩士(2005年)

摘要

本文內容在探討平面顯示器中高密度電漿源的蝕刻製程開發，其中深層的矽氧化層蝕刻以及多晶矽島尺寸的精確定義在一般的CCP（Capacitor Coupled Plasma, CCP）系統中是無法克服的，必須仰賴ICP（Inductively Coupled Plasma, ICP）系統產生的高密度電漿來解決。
本研究以N-Slot ICP system作為製程開發之操作設備，其中N-Slot為平面二維線圈，有別於一般的螺型三維線圈，N-Slot二維線圈利用更小的空間來產生高密度電漿，除了有效避開線圈設計專利上的問題之外，更廣佈的電漿團將使得均勻性較一般ICP為佳。但研究中發現，一致性的蝕刻不均勻分佈是N-Slot二維線圈首要克服的困難，需要運用層次更高的製程開發技術。
我們以多樣的製程及設備效能測試作為田口實驗規劃的基礎，期望以此分析結果瞭解電漿系統中各因子間交互影響的情形，並以蘭牟爾探針、V/I probe、CFDRC電漿模擬輔助我們透視N-Slot ICP system的電漿特性，並且設法研究source-RF的線圈效應在製程開發中的影響，以及高度均勻性的參數組產生多晶矽殘留的原因探討。
本研究的重要核心價值及貢獻在於蝕刻均勻性和蝕刻機制的控制，最後完成開發高深寬比矽氧化層薄膜及高解析度多晶矽薄膜蝕刻製程，證明此型設備在製程上的實用價值。

關鍵字

蝕刻製程 ； 感應式耦合電漿 ； 平面顯示器

並列摘要

This research aims to discuss the development of etching process of High Density Plasma Source in Flat Panel Display. The depth of silicon oxidation layer etching and accurate definition of the poly-silicon island size cannot be overcome in general Capacitor Couple Plasma, (CCP) system. They have to rely on the high density plasma created by the ICP (the Inductively Coupled Plasma, ICP) system to solve the difficulties.
This research utilized the N-Slot ICP system as process development equipment. N-Slot is flat two dimension coil. Differentiating from usual three dimension spiral coil, N-Slot 2-D coil uses smaller space to generate high density plasma. In addition to keeping away the question of the coil design patent effectively, the further-flung plasma regiment will make the uniformity better then general ICP system. But we found out in this research that the general inuniformity is the biggest problem. It needs higher technique to overcome.
We use diverse manufacturing process and the test of equipment capability as the foundation of Taguchi Method. We expect to understand the situation of the alternate influence of each factor in the plasma system of this analytical result. We observed the plasma characteristic by seeing through the ICP system of the N-Slot by Langmuir probe, V/I probe, the emulation of CFDRC plasma, and try to study the coil effect of the source-RF in the manufacturing process the development of influence. We also discuss the parameter set of the excellent uniformity generates the reason of the poly-silicon vestigial inquiring.
The core value contribution of this research is the control of uniformity and etching mechanism. I accomplished developing high aspect ratio oxidation layer film and the high resolution poly-silicon thin film manufacturing process to prove the value of this equipment on process.

並列關鍵字

Etch process ； FPD ； ICP ； N-Slot

參考文獻

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