本論文的研究是利用凹槽反射式金屬板陽極和條狀式陰極來製作約七吋的奈米碳管場發射背光板並當作液晶顯示器的光源。我們設計出不同結構之凹槽反射式金屬板陽極,並在其上塗佈螢光粉,我們將螢光粉混合BCA溶劑並利用噴槍將螢光粉均勻地噴在凹槽表面;在陰極方面,利用厚膜網印製程網印寬140 μm條狀式電極和其上的條狀式奈米碳管 ,之後將陽極和陰極板組裝並放入真空腔體中即可進行量測。 凹槽反射式金屬板有以下五點好處: 一、可承受較大的場發射電流。 二、可迅速導掉附著在螢光粉表面的電荷。 三、散熱快。 四、半圓凹槽結構和拋光過後的金屬表面可產生鏡面效果增加亮度和發光均勻性。 五、封裝時不用放置間隔器,能避免玻璃基板於抽真空封裝時產生破 裂。 我們成功地製造出七吋陰極板出光的背光板。在加入一片擴散片和兩片增亮片並做電流-電壓量測後,在電壓大小3.75 KV時,即可擁有高均勻性及11530 nits的亮度。
The study of this paper is to use reflective metal groove plate anode and long narrow strip cathodes to fabricate a 7 inches carbon nanotube field emission backlight panel (CNT-FEBP) for the light source of liquid crystal displays (LCDs). We designed novel reflective metal groove plates as the anode, and there are different groove structures on them. By mixing the white color phosphor and cellulose acetate butyrate (BCA) solution and spraying it uniformly on the groove surface, then the metal groove plate was fixed on the indium tin oxide (ITO) glass substrate. In cathode, thick film screen printing method was used to print long narrow strips of CNT paste on the surface of cathode electrode that had been fabricated by the same method. And, the anode and cathode plates have been set up in the vacuum chamber for the measurements. The reflective metal groove plate had five advantages listed in the following: 1.It can sustain high field emission current. 2.It can quickly deliver the space charges from the phosphor surface to the outside chamber by the anode circuit. 3.It can rapidly transmit the thermal energy of the anode created by the electron bombardment and reduce the anode temperature. 4.It has groove structure and reflective surface which can increase the illumination area and light uniformity outside the panel. 5.No spacers in packaging the backlight panel, it can avoid the fracture of the glass within vacuum pumping. We successfully fabricated a 7 inches backlight panel with the light coming out from the cathode plate. With one diffuser and two brightness enhanced films (BEFs), the results showed that the illumination of 11530nits at high uniformity with the applied voltage of 3.75KV was demonstrated and I-V measurements were also illustrated.