螯合劑對無電鍍銅聚丙烯腈抗電磁波遮蔽效應之研究

Studies on the Function of Chelating Agents in Electroless Copper Sulfide Deposited Polyacrylonitrile on the EMI Shielding Effectiveness

陳彥宏(Yen-Hung Chen)

指導教授 ： 黃繼遠

大同大學/工程學院/材料工程學系所/博士(2009年)

摘要

本論文研究以無電鍍法（化學鍍）於聚丙烯腈（polyacrylonitrile, PAN）膜面析鍍銅硫鍍層(Cux(x=1,2)S)，此無電鍍法利用二種還原劑，即亞硫酸氫鈉（NaHSO3）及硫代硫酸鈉（Na2S2O3．5H2O）還原銅離子，並在鍍浴中加入螯合劑，如乙二胺四乙酸(EDTA, ethylenediaminetetraacetic acid), 三乙醇胺(TEA, triethanolamine)和乙二胺(EN, ethylenediamine)，探討並比較螯合劑對Cux(x=1,2)S鍍層之生長機制、電磁波遮蔽效應、與Cux(x=1,2)S鍍層厚度、PAN膜微觀結構的影響。
研究結果顯示，無電鍍鍍浴中加入EDTA與TEA，可使PAN薄膜中之乙酸乙烯酯(VAc, vinyl acetate)單體，因PAN膜膨潤而脫離PAN基材，且EDTA與TEA的配位腳，可投錨於PAN基材中，如此將有助於Cux(x=1,2)S鍍層之析鍍效果。本論文並以FT-IR之量測，計算螯合劑濃度（Cchelating agent）對PAN膜膨潤效果之關係，此關係以膨潤度（Sd）表示。當添加EDTA於鍍浴中時，EDTA濃度與PAN膜膨潤度關係式為Sd =0.13+0.90 × e^(-15.15CEDTA)；而添加TEA時其膨潤度關係式為Sd =0.07+1.00 × e^(-15.15CTEA)。此外，利用場發射電子顯微鏡觀察試片，析鍍之EDTA添加濃度由0.00M增加至0.20M時，銅硫鍍層厚度由76nm增加至383nm，且複材之電磁波遮蔽效應由10~12 dB提昇至25~27 dB。並由低掠角X光繞射分析進行鍍層之成份分析得知，不同螯合劑會改變鍍層CuS與Cu2S成份。而本研究添加0.60M TEA螯合劑於無電鍍浴中，生成厚度247 nm之CuS鍍層，有最佳之電磁波遮蔽效果，可達到25~27 dB。

關鍵字

螯合劑 ； 聚丙烯腈 ； 無電鍍

並列摘要

In this study, an effective deposition of copper sulfide (Cux(x=1,2)S) on the PAN film was performed by an electroless deposition method with the reduction agents NaHSO3 and Na2S2O3．5H2O and chelating agents (ethylenediaminetetraacetic acid , EDTA, triethanolamine, TEA and ethylenediamine, EN). The mechanism of the Cux(x=1, 2)S growth, the electromagnetic interference shielding effectiveness (EMI SE) and the morphology of the Cux(x=1,2)S/PAN films were studied.
The results revealed that the vinyl acetate monomer residued in the PAN substrate would be purged due to the swelling effect by EDTA and TEA solution. And then, the anchoring effect occurred due to the hydrogen bonding between the pits of the PAN substrate and the chelating agent. The swelling degree (Sd) was proposed and evaluated from the FT-IR spectra. The relationship between swelling degree of the PAN films and EDTA concentration(C) is expressed as:
Sd =0.13+0.90×e^(-15.15CEDTA).
And TEA series is expressed as:
Sd =0.07+1.00 x e^(-15.15CTEA). On the other hand, the FESEM micrograph showed that the average thickness of copper sulfide increased from 76 nm to 383 nm when the concentration of EDTA increased from 0.00M to 0.20M. Consequently, the EMI SE value of the Cux(x=1,2)S/PAN films increased from 10~12 dB to 25~27 dB. The GIA-XRD patterns indicated that the deposited layer consisted of CuS and Cu2S. The optimum EMI SE value reached 25~27 dB when 0.60M TEA applied in the electroless deposition bath.

並列關鍵字

electroless plating ； polyacrylonitrile ； cheleating agent

參考文獻

5. Y. M Lin, S. C. Yen, Appl. Surf. Sci., 178, (2001), 116.

6. B. Kandasubramanian, M. Gilbert, Macromol. Symp., 221, (2005), 185.

7. W.M. Arnold, P. Harris, C.A. Partridge, M.K. Andrews, IEEE Annual Report – Conference on Electrical Insulation and Dielectric Phenomena, San Francisco, October 1996, 20.

8. P. F. Wilson, M.T. Ma, IEEE Trans. Electromagn. Compact., 30(3), (1988), 239.

10. Y. M. Lin, S. C. Yen, Appl. Surf. Sci., 178 (2001) 116.