聚(3-己烷基吩)之可撓曲式有機薄膜電晶體之製備及特性探討

Studies on the Fabrication and Characteristics of Regioregular Poly(3-hexylthiophene) Flexible Organic Thin-Film Transistor

陳維騏(Wei-Chi Chen)

指導教授 ： 郭欽湊

大同大學/工程學院/化學工程學系所/碩士(2009年)

摘要

本研究使用高位置規則性聚(3-己烷基吩)(P3HT)為半導體材質在聚對苯二甲酸乙二酯(PET)上製作可撓曲式有機薄膜電晶體及其特性探討。熱硬化的聚醯胺樹酯(PA)，雙層有機絕緣層PA分別與聚(4-乙烯酚)(PVP)、聚苯乙烯(PS)、聚甲基丙烯酸甲酯(PMMA)搭配以及PA與無機絕緣層氧化鋁(Al2O3)作為有機/無機雙層閘極絕緣層，探討絕緣層對元件特性的影響。
以單層絕緣層PA製作上接觸式之可撓曲式有機薄膜電晶體，其載子位移率為3.74 × 10-2 cm2/Vs，開關電流比(on/off current ratio)為1.05 × 101；以雙層絕緣層PMMA/PA製作下接觸式之可撓曲式有機薄膜電晶體，其載子位移率為1.68 × 10-2 cm2/Vs，開關電流比為9.29 × 101；而以雙層絕緣層PMMA/PA製作上接觸式之可撓曲式有機薄膜電晶體，其載子位移率為2.56 × 10-2 cm2/Vs，開關電流比為1.65 × 103，可見上接觸元件較下接觸元件特性好。
以PA/PVP為雙層絕緣層的元件載子位移率與開關電流比分別為4.57 × 10-2 cm2/Vs及1.01 × 103；以PA/PS為雙層絕緣層的元件載子位移率與開關電流比分別為8.42 × 10-2 cm2/Vs及1.05 × 103；以PA/PMMA為雙層絕緣層的元件載子位移率與開關電流比分別為5.60 × 10-2 cm2/Vs及3.13 × 102；以PMMA/PA為雙層絕緣層的元件載子位移率與開關電流比分別為2.56 × 10-2 cm2/Vs及1.65 × 103，與單層PA之元件比較，特性明顯提升。
以PA與Al2O3(150 nm)做雙層絕緣層所製備的上接觸式元件，當閘極電壓(VG)從10 V到-50 V，載子位移率與開關電流比分別為8.52 × 10-2 cm2/Vs及2.46 × 105。開關電流比與使用單層PA相比較，可以提升約105倍。
至於彎曲測試結果發現以PMMA/PA為絕緣層所製作的上接觸式元件所得特性均優於其他元件之結果，經過65次彎曲試驗後，mobility 由8.73 × 10-3 cm2/Vs下降至3.79 × 10-3 cm2/Vs，on/off current ratio則由1.41 × 102下降至 1.21 × 101。

關鍵字

聚(3-己烷基吩) ； 薄膜電晶體 ； 可撓曲式

並列摘要

In this study, the characteristics of flexible organic thin-film transistors (OTFT) fabricated with highly regioregular poly(3-hexylthiophene) (P3HT) as semiconductor layer on poly(ethylene terephthalate) (PET) have been investigated. Thermal curable poly(dimer acid-co-alkyl polyamine) (PA), dual layer of organic dielectric, PA, poly(4-vinylphenol) (PVP), polystyrene (PS) and poly(methyl methacrylate) (PMMA), and inorganic dielectric, aluminum oxide (Al2O3) were used as gate dielectric.
The field-effect mobility and on/off current ratio of the top-contact flexible OTFT with PA dielectric layer were 3.74 × 10-2 cm2/Vs and 1.05 × 101, respectively.The field-effect mobility and on/off current ratio of the bottom-contact flexible OTFT with PMMA/PA dual dielectric layer were 1.68 × 10-2 cm2/Vs and 9.29 × 101, respectively. Whereas the field-effect mobility and on/off current ratio of the top-contact flexible OTFT with PMMA/PA dual dielectric layer were 2.56 × 10-2 cm2/Vs and 1.65 × 103, respectively. Therefore, the performance of top-contact OTFT is superior to that of bottom-contact one.
The mobility and on/off current ratio of flexible OTFT with PA/PVP dual layer as gate dielectric layer were 4.57 × 10-2 cm2/Vs and 1.01 × 103, respectively. The mobility and on/off current ratio of flexible OTFT with PA/PS dual layer as gate dielectric layer were 8.42 × 10-2 cm2/Vs and 1.05 × 103, respectively. The mobility and on/off current ratio of flexible OTFT with PA/PMMA dual layer as gate dielectric layer were 5.60 × 10-2 cm2/Vs and 3.13 × 102, respectively. The mobility and on/off current ratio of flexible OTFT with PMMA/PA dual layer as gate dielectric layer were 2.36 × 10-2 cm2/Vs and 1.65 × 103, respectively, are better than the performance of device with PA layer in evidence. All of the OTFTs performance with polymer dual gate dielectric exhibit better characteristics than the device with PA layer.
The mobility and on/off current ratio of P3HT OTFT with PA/Al2O3 (150 nm) dual layer gate dielectric were 8.52 × 10-2 cm2/Vs and 2.46 × 105, respectively, when VG was scanning form 10 V to -50 V. The on/off current ratio increases five orders of magnitude larger than that of device with PA layer.
It is found that the characteristics of the OTFT with PMMA/PA gate dielectric subjected to bending test are superior to those of other devices. After bending 65 times, the field-effect mobility of the top-contact flexible OTFT with PMMA/PA dual dielectric layer decreases from 8.73 × 10-3 cm2/Vs to 3.79 × 10-3 and the on/off current ratio decreases from 1.41 × 102 to 1.21 × 101.

並列關鍵字

Poly(3-hexylthiophene) ； Thin-Film Transistor ； Flexible

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