摘要 超電容電極材料的研發近來受到,近來受到矚目。本研究旨在以電鍍後氧化製備電極的製程,製備出應用於超電容器之鈷氧化物薄膜電極,並比較其擬電容特性。鈷氧化物薄膜之擬電容特性,包括比電容值評估及擬電容之測試,是利用循環伏安於0-1V電壓範圍內,以0.02M KOH當電解液,在室溫下進行,並分析不同圈數後之鈷氧化物之材料特性,檢討影響電容原因。 添加銀離子進行電鍍所製成的鈷氧化物薄膜,其比電容值及擬電容穩定性皆高於未添加銀離子電鍍出來的薄膜,二者的電容值分別為968 F/cm3與313 F/cm3,添加銀離子溶液的鈷氧化物薄膜,其電容值優於未添加鈷氧化物薄膜。
Abstract The research and development of capacitor’s electrode materials has got a lot of attention recently. This study’s purpose was to prepare cobalt oxides which were applied on capacitor by electroplate and post oxidation methods, and to compare the pseudo-capacitive characteristics. The pseudo-capacitive characteristics analysis including specific capacitance and pseudo-capacitive stability evaluation, were analyzed by circles voltammetry test which was proceeded in 0.02M KOH solution at room temperature with voltage scan range of 0–1V. And the material characteristics of cobalt oxide films test with different cycle number were analyzed torealize the affect factors on the pseudo-capacitive stability. The specific capacitance and specific capacitive stability and pseudo-capacitive stability of cobalt oxide films with added Ag+ were higher then not added Ag+. The specific capacitance value were 968 F/cm3 and 313 F/cm3 respectively, it shows the capacitance value of cobalt oxide films with added Ag+ were better than not added Ag+