硒化鎵鋅磊晶層的成長與特性研究

Growth and Characterization of Zn1-xGaxSe epilayers by MBE

彭俊彥(Chun-Yan Peng)

指導教授 ： 楊祝壽

大同大學/電機資訊學院/光電工程研究所/碩士(2010年)

摘要

利用分子束磊晶術( Molecular Beam Epitaxy , MBE )在砷化鎵
(001)基板上成長硒化鎵鋅磊晶層。利用不同鎵的溫度的cell 來控制鎵
在硒化鎵鋅磊晶層的濃度。藉由歐傑電子能譜( X-ray Photoelectron
Spectroscopy )來確定鎵在硒化鎵鋅磊晶層的濃度。以反射量測和電子
式顯微鏡(Scanning Electron Microscopy , SEM).來估計硒化鎵鋅磊晶
層的成長速率。當鎵的cell 溫度低500oC，在低溫光激螢光譜觀察到
自由激子的放光、鎵束縛激子放光以及施體受體對的放光。然而當鎵
的cell 溫度超過500oC，硒化鋅的缺陷放光帶會漸漸被鎵的cell 溫度
所影響。此外，在硒化鋅的近能隙的放光也被抑制。由於發生了晶體
相轉變。我們會利用拉曼散射光譜( Raman scattering spectrum )和
X-ray 繞射儀( X-ray Diffraction , XRD )來證實。在硒化鎵鋅磊晶層的
電性部分，利用霍爾量測( Hall effect measurement )得知。當鎵的cell
溫度在500oC 以下，硒化鎵鋅磊晶層的電子遷移率從286 下降到112
cm2/V-s。而在載子濃度方面當鎵在400oC 為最高約1.0×1017cm-3。

關鍵字

硒化鎵鋅磊晶層

並列摘要

Zn1-xGaxSe epilayers were grown on GaAs by molecular beam
epitaxy. The Ga concentration was controlled by varying the Ga cell
temperature from 350 oC to 780 oC and determined by X-ray
photoelectron spectroscopy (XPS). The growth rate which were estimated
from the reflectance and scanning electron microscopy (SEM). When the
temperature of Ga cell is lower than 500 oC, the emissions of free exciton,
Ga bound exciton, and donor(Ga)-acceptor pair are observed in
photoluminescence(PL) spectra at 20 K. However, the green-yellow-band
emission dominates the spectrum as the Ga cell temperature more than
500 oC. Additionally, the near-band-edge emission is quenched due to the
phase separation and confirmed by X-ray Diffraction (XRD) and Raman
scattering spectrum.. In electronic property of ZnGaSe epilayer, the
mobility of ZnGaSe epilayer drapes from 286 to 112 cm2/V-s as
Ga:350oC to Ga:500oC. The highest carrier concentration of ZnSe:Ga
epilayer is around 1.0×1017cm-3 as Ga:400oC .

並列關鍵字

ZnGaSe epilayers ； MBE

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