以氧化銦錫(indium tin oxide, ITO)製作透明導電膜在現今的光電產業中是為主流,而製作於塑膠基板上更增加了相關產品的便利性和耐衝擊性。 利用射頻磁控濺鍍(RF magnetron sputter)將ITO沉積於玻璃基板以及可撓式塑膠PET和PEN基板上,並增加功率、降低壓力和調整適當膜厚可以在室溫下得到不錯的導電率和穿透率。功率40 W、壓力3 mtorr、厚度200 nm可以在玻璃上得到電阻率4.7×10-4 Ω-cm和穿透率89.2%的薄膜;相同的參數下沉積ITO在PET基板上有電阻率5.1×10-4 Ω-cm和可見光穿透率88.8%。以PEN為基板則得到電阻率8.7×10-4 Ω-cm和可見光穿透率86.8%。 若在同一參數製程時將基板加溫至100℃可以再降低電阻率和提升穿透率。玻璃ITO的電阻率下降至3.6×10-4 Ω-cm,可見光穿透率增加至90%。較能耐高溫的PEN基板(玻璃轉化溫度Tg值較高)則可以得到電阻率3.8×10-4 Ω-cm,可見光穿透率88.9%之結果。
The production of transparent conducting oxide films using ITO (indium tin oxide) is the mainstream in electro-optical industry. Its production on plastic substrates adds to the convenience and avoid impact resistance of related products. In this study, the ITO is deposited on glass and PET and PEN substrates by RF magnetron sputtering. The resistivity and transmittance are improved by increasing RF power, decreasing pressure and controlling the film at a proper thickness. The optimal parameters for the ITO films are RF power of 40 W, deposition pressure of 3 mtorr, and films thickness of 200 nm at room temperature. We can get the resistivity of 4.7×10-4 Ω-cm and transmittance in the visible right of 89.2% on glass. Under the same parameters, the deposition of ITO on PET substrate produces the resistivity of 5.1×10-4 Ω-cm and transmittance in the visible right of 88.8%. For the PEN, the resistivity is 8.7×10-4 Ω-cm and transmittance in the visible right is 86.8%. If the substrates are heated to 100℃, the resistivity decreases and transmittance increases for ITO film. As the result, the resistivity decreases to 3.6×10-4 Ω-cm, and the transmittance in visible light increases to 90.4% on glass substrate. The PEN substrate has higher Tg than PET, so it can stand the temperature of 100℃. Its resistivity is 3.8×10-4 Ω-cm, and transmittance in the visible right is 88.9%.