本研究中使用射頻磁控濺鍍系統將氧化鎳、奈米碳片沉積於玻璃基板。在濺鍍的過程中改變不同沉積時間、成長溫度和功率,並藉由SEM、XRD以及循環伏安量測,從中研究複合薄膜之結構,並且利用循環伏安量測尋找最佳的參數。 在奈米碳片製程研究中我們發現在成長溫度與沉積時間的改變下對於比電容值有明顯地提升,實驗使用氬氣混合氫氣之下沉積80分鐘、成長溫度350℃的奈米碳片,其具有最佳的比電容值,在掃描速率0.01V/s的速率下,只有氧化鎳薄膜為電極材料時的比電容值只有10.9 Fg-1,但加上奈米碳片後之複合薄膜的比電容值為65 Fg-1,而當掃描速率0.005V/s的速率下,我們可以得到我們最大的比電容值為97.6 Fg-1。
In this study, we fabricated the nickel oxide (NiO) and carbon nanoflakes (CNFs) on glass substrate by radio-frequency magnetron sputtering system. The effects of deposition time, and were studied growth temperature and power supply on the composite film during the sputtering process. The resultant films were surface morphology and composite measured by SEM and XRD to study the structure of the composite films. Additionally, were carried out the cyclic voltammetry measurements to investiaged the electrochemical performance as an electrode for supercapacitor. In the nano-carbon film process, we found that the specific capacitance values have improved significantly in the change of the growth temperature and deposition time, the experiments under argon mixed hydrogen deposition 80 minutes, the growth temperature of 350 ℃, nano-carbon sheets,its specific capacitance value of the scan rate of 0.01 V/s rate of only nickel oxide film as the electrode material, the specific capacitance value only 10.9 Fg-1, but coupled with nano-carbon sheets composite filmsthan the capacitance value of 65 Fg-1, and then when the scan rate of 0.005 V/s rate, we can get our largest capacitance value of 97.6 Fg-1.