This thesis aims to fabrication the p-type ZnO. Due to the native n-type material characteristic of ZnO, it’s an important issue to fabrication the p-type ZnO if one want to widely realize ZnO-based photoelectric devices. In this study, we fabricated the p-type ZnO by using the RTA to Oxidation Zn3N2 and announce a new N-frame structure concept that can lead the n-type ZnO to the p-type ZnO.