快速升溫熱退火緻密氧化鉿製備與電性分析

Fabrication and Electrical Properties of Densified HfO2 by Rapid Thermal Annealing

陳文偉(Wen-Wei Chen)

指導教授 ： 林烱暐

大同大學/電機資訊學院/光電工程研究所/碩士(2012年)

摘要

本文中，我們利用快速熱退火系統緻密HfO2 並且改善薄膜內缺陷。HfO2 是利用射頻磁控濺鍍系統在室溫下製備，經過快速熱退火後利用X 射線光電子能譜、X-Ray 繞射、傅式轉換紅外光光譜儀、原子力顯微鏡對HfO2 進行膜分析，根據以上分析驗證快速熱退火後薄膜內界面陷阱電荷及其他缺陷的減少。最後製作成MIM 與MOS元件量進行電性分析，並利用前述膜分析的結果驗證MIM 崩潰電場強度的增大與MOS C-V 特性曲線的改善。

關鍵字

緻密 ； 氧化鉿 ； 快速熱退火

並列摘要

In this study, rapid thermal annealing was used to densify HfO2 and improve defects of thin films. HfO2 was prepared by radio frequency magnetron sputter at room temperature, after rapid thermal annealing using X-ray photoelectron spectroscopy, X-Ray diffraction, Fourier transform infrared spectrometer, atomic force microscopy to analysis HfO2, according to the above analysis to verify interface trap charges and other defects were reduced by rapid thermal annealing.Finally,fabricated MIM and MOS devices to measure electrical properties, and used the above analysis to verify the breakdown strength of MIM and C-V characteristic curve of MOS were improved.

並列關鍵字

HfO2 ； Rapid Thermal Annealing ； Densified

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