- 期刊
砷化鎵異質介面雙極性電晶體元件隔離之離子植入分析研究
Design of Experiment on GaAs HBT Device Ion Implantation Isolation
摘要
離子植入法被使用在1um 和2um HBT 元件間的隔離，以五道不同劑量與能 量的條件，進行離子植入來隔離各元件的主動區域，原先是以數值模擬方式得到的 離子植入參數，其測得的隔離漏電流約為45 nA，因此採用田口式實驗設計的方 法，可以找出最佳的離子植入條件，亦即可得到較小且均勻度一致的隔離漏電流， 實驗中是以L9 矩陣的直交設計，來規劃四個因子與各三個條件，分別在晶片上植 入不同條件的離子，然後再量測隔離漏電流，經由y 值反應分析與SN 計算的結果， 可得到一組最佳的離子植入條件，隔離漏電流可降低為23 nA。
並列摘要
Implantation isolation is used in 1um and 2um HBT device isolation technologies.Five implant dose and energy are used to isolate deep active region. The original doseand energy conditions were chosen by the implant simulation tool, however, we foundthat the isolation leakage current was about 45 nA. Therefore, a DOE with Taguchimethod was utilized to find the optimum implant condition for achieving lower andconsistent isolation leakage current. L9 matrix of orthogonal design was based on 4factors with 3 levels to process wafers and measure the leakage current. After theresponse analysis（y value）and SN（Signal Noise） calculation, we came out with anoptimum implant condition to get the minimum leakage current about 23 nA.
延伸閱讀
- 林奕亨（2014）。以x光繞射儀研究(111)銻砷化鎵內的相分離與雙晶缺陷〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2014.10083
- Kai, S. Y. (2013). 分子束磊晶成長氧化釔/砷化鎵之介面及其電性研究 [master's thesis, National Tsing Hua University]. Airiti Library. https://www.airitilibrary.com/Article/Detail?DocID=U0016-2511201311344926
- 陳馨媛（2008）。具銻砷化銦鎵基極之異質接面雙極性電晶體特性與材料分析〔碩士論文，國立中央大學〕。華藝線上圖書館。https://www.airitilibrary.com/Article/Detail?DocID=U0031-0207200917355322
- 藍文杰（2007）。Simulations and Designs forGrowth of GaN in the HVPE Reactor〔碩士論文，國立臺灣大學〕。華藝線上圖書館。https://doi.org/10.6342/NTU.2007.03259
- Yan, Y., Zhao, Q., Gu, M., & Mao, Y. (2021). Calibration of low-cost harmful gas sensors based on linear regression method. International Core Journal of Engineering, 7(11), 425-433. https://doi.org/10.6919/ICJE.202111_7(11).0064