Growth of Carbon Nanotubes on Porous Silicon Substrates

在多孔性矽基板上鍍上一層鎳膜當做催化劑後，以甲烷為碳源，利用熱化學氣相沉積技術，我們在多孔性矽基板上成長奈米碳管。先以陽極處理製作出孔洞大小約10~20 nm的多孔性矽基板，再以電子槍蒸鍍法在基板上鍍出厚度分別為5 nm、10 nm及50 nm的鎳薄膜。我們以孔洞的大小及鎳催化劑的厚度為控制參數，以便研究成長出的奈米碳管的特性。透過所長出樣品表面形貌的比較，我們探討及分析了多孔性結構與催化劑厚度在奈米碳管的成長所扮演的角色。

關鍵字

多孔性基板；奈米碳管；熱化學汽相沉積

並列摘要

Carbon nanotubes (CNTs) were grown by the method of thermal chemical vapor deposition (CVD) using methane (CH4) as the carbon source on porous silicon template deposited with a thin layer of nickel as the growth catalyst. Porous silicon substrates with pore sizes of 10~20 nm were prepared and Ni-catalyst of thicknesses 5 nm, 10 nm and 50 nm were then deposited by c-gun evaporation. The size of the pores and thickness of the Ni-catalyst were taken to be the controlling parameters for studying the growth characteristics of the CNTs. Through comparing the surface morphology of the as-grown samples, the role of the porous structure and the thickness of the Ni-catalyst on the formation of CNTs were investigated and analyzed.

並列關鍵字

Porous substrates ； carbon nanotubes ； thermal chemical vapor deposition

國際替代計量

Growth of Carbon Nanotubes on Porous Silicon Substrates

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