高頻共振穿透元件等效電路模型分析之研究

The Analysis of Resonant Circuit Model in Resonant Tunneling Diodes

李致頤(Jenny Chih-Yu Lee) ； 楊誌欽(Chih-Chin Yang) ； 陳建廷(Jian-Ting Chen) ； 楊詩央(Shi-Yang Yang) ； 陳重延(Chong-Yan Chen)

《高雄海洋科大學報》 21期 (2007/03) Pp. 1-10

https://doi.org/10.6983/KHHYKTHP.200703.0001

摘要

本文主要為共振穿透元件等效電路模型及頻率響應研究。共振穿透元件特性的改善是藉由一系列元件電阻(R)、量子效應電感(L)、介面電容(C)及負微分電阻元件(G(下標 N))所組成之等效電路之研究來完成，並能正確計算出共振與自振頻率及正確的交流分析。利用計算模擬之共振和自振頻率及負微分電阻(G(下標 N))對總阻抗之影響研究中發現，當負微分電阻效應不存在時，共振穿透元件具有相當高的阻抗值，此時產生共振可以將微波功率發射出去，而傳輸損耗會降低，當負微分電阻之絕對值變大時，則總阻抗會成一定值。當元件等校模型之外加頻率超過一定值時，則該模型總阻抗會變成負值，也就是發生共振穿透效應，此時負電阻發生效用，因此該模型產生之電壓電流關係曲線也就產生峰谷值負電阻曲線，研究證實出共振穿透元件峰谷值負電阻曲線之發生原因，並使電流－電壓關係曲線成為可控性。

並列摘要

To obtain the formulae in terms of the equivalent circuit parameters of resonant tunneling diode (RTD) and its resistive load for describing the unstable conditions in the negative differential resistance (NDR) region of dc current-voltage characteristics measurement, this study is completed. The derived results have be shown for the first time that the oscillation phenomenon appearing in the NDR region depends mainly on the inductance or is less influenced by the capacitance. The instability analysis of current-voltage characteristic, in the negative differential resistance region particularly, has only been studied in tunneling diodes but not in resonant tunneling diodes. The characteristic of instability, oscillation, or stability of NDR region play an important role in application of microwave circuit and oscillation circuit, owing that the resonant frequency of resonant tunneling diodes can be used the characteristic of NDR region. In this study, we studied the oscillations of the resonant tunneling diodes in NDR region by calculating the static and dynamic circuits of diode. It is possible to predict some aspects of unstable behavior of the operating point by an analytical approach.

並列關鍵字

RTD ； equivalent circuit ； oscillation