Preparation and Characterization of La3Ga5SiO14 Films by Sol-Gel Deposition

以溶膠－凝膠法製備La3Ga5SiO14薄膜與特性之研究

胡毅(Yi Hu) ； 王逢偉(Feng-Wei Wang) ； 林和龍(Hur-Lon Lin)

《先進工程學刊》 3卷1期 (2008/01) Pp. 17-20

https://doi.org/10.29948/JAE.200801.0003

摘要

本研究使用溶膠－凝膠法來製備La3Ga5SiO14(LGS)薄膜，並使用X光繞射、掃描式電子顯微鏡、X光光電子光譜與光致發光光譜儀來檢測薄膜特性。經旋鍍後的非晶質薄膜可以使用1200℃退火而結晶並具有LGS(110)優選取向。在光致發光光譜儀中，使用381nm為激發光源可使LGS薄膜發出429nm波長的光。此發光來源推測為Ga(上標 3+)離子佔據晶格的八面體位置所導致，且此發光現象會隨著退火時間的增加而有降低的趨勢。在本文中，將近一步討論LGS薄膜的發光機制與結晶結構關係。

關鍵字

La3Ga5SiO14 ； 薄膜 ； 結晶化 ； 溶膠凝膠旋鍍法 ； 光致發光

並列摘要

A simple sol-gel deposition was employed to prepare La3Ga5SiO14 (LGS) films which were characterized by X-ray diffraction, scanning electron microscopy images, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements. The as-deposited LGS films were amorphous and induced to crystallize with (110) preferred orientation by annealing at 1200˚C. A blue emission peak of the films by PL measurement was found at 429 nm when excited at 381nm. The blue PL emission of the films was suggested originated from the Ga(superscript 3+)at the octahedral sites. The luminescent intensity of LGS films would be decreased when the annealing times increased. The relationship between the mechanism of luminescence and the crystalline structure of the LGS films are discussed.

並列關鍵字

La3Ga5SiO14 ； thin films ； crystallization ； sol-gels spin coating ； photoluminescence