低溫多晶矽膜再結晶特性與晶粒尺寸之光學檢測系統研發

Rapid Optical Measurements on Recrystallization Characterization and Grain Size of Polycrystalline Silicon

郭啟全(Chil-Chyuan Kuo) ； 趙金聖(Chin-Sheng Chao)

《先進工程學刊》 6卷1期 (2011/01) Pp. 31-37

https://doi.org/10.29948/JAE.201101.0004

摘要

本文運用He-Ne雷射(λ=632.8nm)為檢測光源(probe laser)，搭配光學檢測系統，發展一套低溫多晶矽膜之晶粒尺寸與再結晶特性之光學檢測技術，藉由檢測光源經過不同準分子雷射能量密度照射矽膜後圖樣(pattern)之不同熔化區域(regime)，觀察穿透率變化與峰值強度，進而推測出低溫多晶矽膜之再結晶特性與晶粒尺寸。

關鍵字

低溫多晶矽膜 ； 晶粒尺寸 ； 再結晶特性 ； 光學檢測系統

並列摘要

An optical inspection system with simple optical arrangements for rapid measurement of recrystallization characterization and grain size of poly-Si thin films is developed in this study. The recrystallization characterization of the sample after excimer laser annealing can be easily manifested directly by the profile of peak power density distribution. The relation between the maximum grain size of poly-Si thin films and transmission of the optical measurements is investigated, which is found to coincide with the observation by field-emission scanning electron microscopy.

並列關鍵字

low-temperature polycrystalline silicon ； grain size ； recrystallization characterization ； optical measurements