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Characterization of Organic Light-Emitting Diodes with Various Aniline-Related Materials as a Hole Injection Layer

以苯胺相關材料作為電洞注入層之有機發光二極體的特性分析

摘要


本文探討利用不同的苯胺相關材料作為電洞注入層(Hole injection layer,HIL)對有機發光二極體(Organic light-emitting diode,OLED)性能之影響。HIL是利用旋轉塗佈法將去摻雜後之聚苯胺(Polyaniline, PANI)、聚苯胺/銀奈米複合材(PANI/Ag)、或苯胺寡聚體等三種不同的苯胺材料,塗佈在銦錫氧化物(Indium tinoxide, ITO)玻璃基板上所形成之薄膜;而OLED的基本架構則採用ITO/HIL/NPB/Alq_3/LiF/Al的異質接合形式。由電流密度(Current density, J)-電致發光強度(Electroluminescence intensity, EL)-偏壓(Bias voltage, V)之實驗資料分析,相較於沒有HIL的OLED而言,具有PANI/Ag為HIL的OLED在V =14 V時的EL明顯增強約30倍。隨後,本文再將這些J-V實驗資料,根據不同之電荷載子傳輸機制,作一系列之數值擬合分析。結果顯示若採用Fowler-Nordheim發射模型,具有PANI/Ag或苯胺寡聚體為HIL的OLEDs其J及EL的增強,可歸因於此兩材料做為HIL的加入,導致能量壁障與閾值電壓的下降。

並列摘要


Effects from various aniline-related materials used as a hole injection layer (HIL) on the performance of organic light-emitting diode (OLED) were studied. A basic OLED heterostructure of ITO/HIL/NPB/Alq_3/LiF/Al was adopted, and a thin layer formed by dedoped polyaniline (PANI), polyaniline/silver composite (PANI/Ag), or aniline-oligomers was spin-coated on top of indium tin oxide (ITO) glass as the HIL. From the current density (J)-electroluminescence intensity (EL)-bias voltage (V) characteristic curves, an enhancement of EL by a factor of around 30 at V=14 V was obtained for the OLED with aniline-oligomers as the HIL as compared with the one without HIL. Then, the experimental J-V data were numerically analyzed with various charge-carrier transport models. Based on the Fowler-Nordheim emission, the enhancement of J as well as EL was attributed to the reduction of the energy barrier E_B and threshold voltage V_T after the introduction of PANI/Ag composite or aniline-oligomer as the HIL.

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