Heterojunction WSe2/MoS2 Crystal Growth by Chemical Vapor Transport

化學氣相傳送法成長WSe2/MoS2異質單晶

唐宏怡(Horng-Yi Tang)

《華岡工程學報》 12期 (1998/05) Pp. 15-23

https://doi.org/10.29987/CCUHKJE.199805.0002

摘要

0.1μm以下的超微影製造技術，對於未來的物理創新研究或新式電子元件，研發都具有相當的要性。二維結構材料由於能提供超微影製程所需的原子級乾淨表面，因此被認爲是最適合開發的材料之一。高品質的單晶對超微影技術研發有其必要性，本研究中初步証明利用化學蒸氣傳送法可成長出新的WSe2/MoS2異質接合單晶晶體。

並列摘要

Nanolithography is the technology of fabricating sub-0.1um structures for use in either novel experiments in physics or electronic devices with great potential in future. Materials with two dimensional structure can easily provide fresh surface and hence is recognized to be one of the most suitable family for nanolithography purpose. High quality single crystal is required before further studies can be proceeded. In this study, a new MoS2/WSe2 heterojuction single crystal is demonstrated and grown by the chemical vapor transport technique.

並列關鍵字

Nanolithography ； dichalcogenide ； heterojuction