Indium oxide nanostructures have been prepared via well-developed methods, including chemical vapor deposition(CVD) and carbothermal reduction.High yields are critical in order to fabricate nanostructures into devices for electrical characterizations.In this work a high yield of In(subscript 2)O(subscript 3) octahedra were synthesized by the CVD method, octahedra with 600-1600 nm in lengths are observed by scanning electron microscopy(SEM).While transmission electron microscope(TEM) image revealed that In(subscript 2)O(subscript 3) octahedra are single crystalline. X-ray diffraction spectra(XRD) indicated that (222),(400) and (440) are the major diffraction planes. XRD peaks of the sample are then compared with the JCPDS card revealing that the In(subscript 2)O(subscript 3) octahedron structure is body-centered cubic. In(subscript 2)O(subscript 3) octahedra are believed to have potential applications in field emission display.