複量子井GaAs/Al(下標 x)Ga(下標 1-x)As超晶格的光致發光與激發光譜之研究

Photoluminescence Spectroscopy of MQW GaAs/Al(subscript x)Ga(subscript 1-x)As Superlattices

趙家和(Chia-Ho Chao)

《光學工程》 42期 (1991/12) Pp. 42-52+54

https://doi.org/10.30011/OE.199112.0007

摘要

用分子束磊晶(MBE)或有機金屬化學氣相沈積法(MOCVD)，在砷化鎵(GaAs)基座上，製造出複量子井(MQW)結構GaAs/Al(下標 x)Ga(下標 1-x)As的超品格(SL)材料。以不同的光源投射在三種試樣上，來感生光致發光(PL)，這個研究工作可以探索出GaAs/Al(下標 x)Ga(下標 1-x)As複量子井超晶格結構的微細資訊。經由寬域(4000Å~8000Å)的光致激發光譜(PLE)，得以顯現出在量子井內及超越其上的能階。實驗結果還可觀察到異質層邊界的不規則性。試樣参數是利用X-射線雙晶繞射量測，來作出精確的決定。

並列摘要

Multi-Quantum-Well (MQW) structure GaAs/Al(subscript x)Ga(subscript 1-x)As Superlattices (SL) have been fabricated on GaAs substrates by Molecular Beam Epitaxy (MBE) or Metal Organic Chemical Vapor Deposition (MOCVD). The light sources were to induce Photoluminescence (PL) from three samples. This study was treated as a probe of microscopic details of GaAs/Al(subscript x)Ga(subscript 1-x)As MQW superlattice structures. Quantized energy levels within and above the quantum well were revealed by a very wide range (4000 Å~8000 Å) PL Excitation (PLE) spectroscopy. Heterolayer boundary irregularities and anomalous features were observed in GaAs/Al(subscript x)Ga(subscript 1-x)As. X-ray double crystal diffraction measurements were carried out for accurate determination of the sample parameters by experiments and theoretical curve fittings.