High Temperature InAs Infrared Detector Based on Metal-Insulator-Semiconductor Structure

金属絕缘層半導體結構的高温砷化銦紅外線偵测器之研究

蘇宏德 ； 李嗣涔

《光學工程》 52期 (1995/12) Pp. 5-10

https://doi.org/10.30011/OE.199512.0001

並列摘要

The narrow bandgap Ⅲ-V semiconductors InAs and InSb have large potential for infrared device applications. InSb infrared detectors have been extensively studied with satisfactory results. But its bandgap is so small (0.17eV at 300K) that it can work only at the temperature below 77K. The energy gap of InAs (0.34eV at 300K) is larger than that of InSb, so the InAs infrared detectors can be used in higher temperature that thermoelectric (TE) cooler can offer.
The Au/Cr/a-SiN: H/(n)InAs/GaAs Metal-Insulator-Semiconductor (MIS) capacitor was fabricated successfully as a basic element of charge injection device using plasma enhanced chemical vapor deposition. The electrical properties were analyzed by the high frequency (1MHz) capacitance-voltage and conductance-voltage measurements. When biased into deep depletion, the capacitor can be used as an integrated infrared (IR) detector. The temperature-dependant CID performance indicates that the InAs CID can be operated in higher temperature (180K) than that of an InSb IR detector (77K) and the cooling can be done by thermoelectric (TE) cooler.