氮化鎵藍紫光雷射二極體之發展與製作

Development and Fabrication of GaN-based Blue-Violet Laser Diodes

卓昌正(Chang-Cheng Chuo) ； 涂如欽(Ru-Chin Tu) ； 郭威宏(Wei-Hong Kuo)

《光學工程》 80期 (2002/12) Pp. 23-30

https://doi.org/10.30011/OE.200212.0003

摘要

為因應未來高儲存容量的需求，HD-DVD將是下一代光儲存系統的主流，其中藍紫光雷射讀寫頭更是此系統之關鍵零件。因此，氮化鎵藍紫光雷射二極體之製作技術已成為各研究單位極力開發之關鍵技術。目前，工研院光電所已成功製作出室溫脈衝操作之藍紫光雷射二極體元件，發光波長為419nm，臨界起振電流密度為6kA/平方公分。未來將致力於材料缺陷密度之降低，以期延長元件操作壽命，達到室溫連續電流操作特性。

關鍵字

高容量數位影音光碟 ； 藍紫光雷射二極體 ； 氮化鎵

並列摘要

For the demand of high storage capacity in the future, HD-DVD system will be the mainstream of next-generation optical storage system, and blue-violet laser diode pickup head is the key component of this system. Hence, development of GaN-based blue-violet blue laser diodes has become the key technology in the recent years. At the moment, room temperature pulse-operation blue-violet laser diodes are demonstrated at OES/ITRI. The lasing wavelength is 419 nm, and the threshold current density is 6 kA/cm^2. By reducing the dislocation density to last the device lifetime, room temperature continuous-wave operation will be realized.

並列關鍵字

HD-DVD ； blue-violet laser diode ； GaN