在這篇文章中,我們提出並展示了一種新穎的行波式光偵測器:用低溫成長神化錄製成的金屬-半導體-金屬行波式光偵測器(MSMTWPD)。量測的MSMTWPD展現出了破世界紀錄的輸出功率-電頻寬乘積表現(5.7THz-V)。我們更利用MSMTWPD結構展示出了一種新穎的兆赫波光電發射器。此新穎元件在1.6兆赫頻段展現出了世界紀錄的光電轉換效率(輻射電功率/入射光功率)。所得到的轉換效率值(1.2×10^(-4))比所發表過的最佳值(9×10^(-6))還大了二十倍以上。
In this dissertation, we proposed and demonstrated a novel type of TWPD: low temperature grown GaAs based metal-semiconductor-metal traveling wave photodetectors (LTG-GaAs based MSMTWPDs). The MSMTWPD displays record high electrical bandwidth (570GHz) and record PB products as large as 5.7 THz-V. By using the L TG-GaAs based MSMTWPD, we also demonstrated a novel THz photonic transmitter. Record high E/O (electrical power/optical power) conversion efficiency has been demonstrated in the 1.6THz. The obtained conversion efficiency (1.2×10^(-4)) is larger than the previous best-published results over ten times (9×10^(-6)).