具有部分摻雜光吸收層之高功率高響應度及高頻寬漸耦合式邊射型光檢測器

High-Responsivity, High-Speed, and High-Saturation-Power Performances of Evanescently Coupled Photodiodes with Partially p-Doped Photo-absorption Layer

吳衍祥(Y.-S. Wu) ； 許晉瑋(J.-W. Shi) ； 黃凡修(F.-H. Huang) ； 詹益仁(Y.-J. Chan)

《光學工程》 93期 (2006/03) Pp. 46-51

https://doi.org/10.30011/OE.200603.0006

摘要

本論文針對1.55μm波長的光纖通訊系統中接收端前級元件光二極體之製作與研究，在幾何結構上採用漸耦合式光波導結構結合部分摻雜吸收層的主動區域，以期能達到高速、高功率及高響應度的表現，首先利用模擬軟體來模擬光在前端光波導內傳遞的情形，再利用數學運算軟體模擬電性的表現並加入高功率操作的模擬參數，以此決定此邊耦合光檢測器的磊晶結構與所需之製程光罩與流程，再利用外插節拍量測法測量並分析元件之特性。

關鍵字

光二極體 ； 高功率光二極體 ； 光接收端 ； 高響應度 ； 高頻寬 ； 漸耦合式光波導

並列摘要

In this paper we focus on designing and demonstrating the photodiode of front-end receiver in optical communication system at 1.55μm wavelength. Through combing the evanescently coupled waveguide structure and partial p-doped photo-absorption layer, high speed, high power, and high responsivity can be achieved. First of all, we simulated the behavior of optical power propagation in front-end waveguide by using software, then the high power operation were introduced in the simulation of electrical behavior by using calculation tool to design the epi-layer and fabrication mask of edge coupled photodetector. Finally, we adopt the heterodyne beating setup to measure and analyze the properties of demonstrated device.

並列關鍵字

photodiode ； high power photodiode ； photo-receiver ； high responsivity ； high-bandwidth ； evanescently coupled waveguide