摘要
本論文中，我們利用氮化鎵二維光子晶體結構在平面上製作共振腔，有效抑制二維平面上之自發輻射，使光有效侷限於結構中缺陷的位置，並在室溫下架設微光致螢光系統(μ-PL)，成功量得氮化鎵光子晶體之缺陷模態。當入射光能量≧0.7μJ時，可使氮化鎵二維光子晶體結構被激發，產生中心波長為372nm之共振模態。
關鍵字
光子晶體並列摘要
In this study, photonic crystals have been designed, fabricated, and characterized in GaN bulk materials. The energy dependent measurement showed that the emission peak width can be significantly reduced as the pumping pulse energy was larger than 0.7μJ at room temperature. The mode at the wavelength of 372nm emitted from the defect due to the structure disorder unintentionally introduced during the fabrication process of the GaN photonic crystals can be obtained.
並列關鍵字
photonic crystals被引用紀錄
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延伸閱讀
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